Semiconductor devices having through-electrodes and methods for fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKyu-Hee Han, Pil-Kyu Kang, Taejin Yim, Naein Lee
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Abstract
The present inventive concepts provide semiconductor devices and methods for fabricating the same. The method includes forming an inter-metal dielectric layer including a plurality of dielectric layers on a substrate, forming a via-hole vertically penetrating the inter-metal dielectric layer and the substrate, providing carbon to at least one surface, such as a surface including carbon in the plurality of dielectric layers exposed by the via-hole, forming a via-dielectric layer covering an inner surface of the via-hole, and forming a through-electrode surrounded by the via-dielectric layer in the via-hole.
Claims20
A method for fabricating a semiconductor device, the method comprising:
- forming an inter-metal dielectric layer including a plurality of dielectric layers on a substrate;
- forming a via-hole vertically penetrating the inter-metal dielectric layer and the substrate;
- contacting a gas including carbon and at least one of silicon (Si), hydrogen (H), oxygen (O) and nitrogen (N) to at least one surface of the inter-metal dielectric layer exposed by the via-hole and to a surface of the substrate exposed by the via-hole;
- forming a via-dielectric layer covering an inner surface of the via-hole;
- and
- forming a through-electrode surrounded by the via-dielectric layer in the via-hole.
A semiconductor device comprising:
- an integrated circuit on the substrate;
- the inter-metal dielectric layer including at least one metal interconnection electrically connected to the integrated circuit;
- and
- the through-electrode vertically penetrating the inter-metal dielectric layer and the substrate,
- wherein the inter-metal dielectric layer comprises a carbon-containing low-k dielectric layer having a dielectric constant lower than that of silicon dioxide,
- wherein the low-k dielectric layer comprises a surface adjacent to the through-electrode and a bulk distal to the through-electrode in a horizontal direction, and
- wherein the low-k dielectric layer comprises Si—CH3 bonds having hydrophobic properties, a carbon concentration of the low-k dielectric layer becoming reduced and then increased from the surface of the low-k dielectric layer toward the bulk of the low-k dielectric layer.
A method comprising:
- providing a semiconductor substrate including at least one dielectric layer and a via-hole vertically penetrating the at least one dielectric layer and the semiconductor substrate, the at least one dielectric layer having a first portion exposed by the via-hole with a first concentration of carbon and a second portion with a second concentration of carbon, wherein the first concentration is less than the second concentration;
- and
- adding carbon to at least the first portion of the at least one dielectric layer by contacting a gas including carbon and at least one of silicon (Si), oxygen (O) and nitrogen (N) to the at least the first portion of the at least one dielectric layer, wherein adding carbon to the at least the first portion of the at least one dielectric layer is carried out at a temperature in a range of about 200° C. to about 500° C. in an oxidation or inert atmosphere.
Dependencies are inferred from the claim text.