CVD apparatus for improved film thickness non-uniformity and particle performance
AssigneeApplied Materials, Inc.
InventorsBinh Tran, Anqing Cui, Bernard L. Hwang, Son T. Nguyen, Anh N. Nguyen, Sean M. Seutter, Xianzhi Tao
Life of this patent
Estimating the term…
Abstract
Embodiments of the invention provide improved apparatus for depositing layers on substrates, such as by chemical vapor deposition (CVD). The inventive apparatus disclosed herein may advantageously facilitate one or more of depositing films having reduced film thickness non-uniformity within a given process chamber, improved particle performance (e.g., reduced particles on films formed in the process chamber), chamber-to-chamber performance matching amongst a plurality of process chambers, and improved process chamber serviceability.
Claims20
An apparatus for processing substrates, comprising:
- a process chamber having a lower assembly and an upper assembly movably coupled to the lower assembly via a hinge, wherein the lower assembly includes a chamber body having a substrate support assembly disposed in the chamber body, and wherein the upper assembly includes a lid;
- and
- a gas feedthrough coupled to the chamber body and the lid to facilitate flow of a gas from a gas panel to an interior of the process chamber, wherein the gas feedthrough comprises an upper body externally coupled to a periphery of the lid and a lower body externally coupled to a periphery of the chamber body such that the gas feedthrough does not pass through the chamber body or the lid, wherein the upper body includes one or more upper ports and the lower body includes a corresponding one or more lower ports, and wherein the one or more upper ports mate with the corresponding one or more lower ports when the lid is in a closed position.
Dependencies are inferred from the claim text.