Semiconductor device and method of forming a metallurgical interconnection between a chip and a substrate in a flip chip package

A method of making a semiconductor device, comprising:

• providing a substrate singulated from a substrate panel;
• forming a conductive layer including a first metal on the substrate;
• providing a semiconductor wafer including a semiconductor die;
• forming a bump including a second metal on the semiconductor die;
• forming an adhesive layer over the substrate;
• positioning the substrate proximate to the semiconductor die to contact the bump to the conductive layer and form a bonding interface;
• curing the adhesive layer by heating the semiconductor die and bonding interface to a melting point of the first metal for a time sufficient to melt a portion of the first metal from the conductive layer and to cure the adhesive layer to secure the semiconductor die to the substrate;
• dissolving a portion of the bump by metallurgically reacting the bump and the conductive layer at the melting point of the first metal;
• forming a bonding phase at the bonding interface by mixing a dissolved portion of the bump with a molten portion of the first metal;
• and
• singulating the semiconductor wafer to separate the semiconductor die after forming the bonding phase.