Method for forming gate dielectric layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLiang-Chen Chi, Chia-Ming Tsai, Chin-Kun Wang, Jhih-Jie Huang, Miin-Jang Chen
Life of this patent
Estimating the term…
Abstract
A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate. The method includes forming a buffer layer over the semiconductor substrate. The buffer layer is in an amorphous state. The method includes nitriding the buffer layer into a nitride buffer layer. The method includes forming a gate dielectric layer over the nitride buffer layer. The method includes performing a thermal annealing process to convert the gate dielectric layer into a crystalline gate dielectric layer. The method includes forming a gate electrode over the crystalline gate dielectric layer.
Claims20
A method for forming a semiconductor device, comprising:
- providing a semiconductor substrate;
- forming a buffer layer over the semiconductor substrate, wherein the buffer layer is in an amorphous state;
- nitriding the buffer layer into a nitride buffer layer;
- forming a gate dielectric layer over the nitride buffer layer;
- performing a thermal annealing process to convert the gate dielectric layer into a crystalline gate dielectric layer;
- and
- forming a gate electrode over the crystalline gate dielectric layer.
A method for forming a semiconductor device, comprising:
- providing a semiconductor substrate;
- forming a buffer layer over the semiconductor substrate, wherein the buffer layer is in an amorphous state;
- nitriding the buffer layer into a nitride buffer layer;
- forming a gate dielectric layer over the nitride buffer layer;
- performing a thermal annealing process to convert the gate dielectric layer into a crystalline gate dielectric layer, wherein a thermal annealing temperature of the thermal annealing process is lower than a first crystallization temperature of the nitride buffer layer;
- and
- forming a gate electrode over the crystalline gate dielectric layer.
A method for forming a semiconductor device, comprising:
- providing a semiconductor substrate;
- forming a buffer layer over the semiconductor substrate, wherein the buffer layer is in an amorphous state, and the buffer layer is in direct contact with the semiconductor substrate;
- nitriding the buffer layer into a nitride buffer layer;
- forming a gate dielectric layer over the nitride buffer layer;
- performing a thermal annealing process to convert the gate dielectric layer into a crystalline gate dielectric layer;
- and
- forming a gate electrode over the crystalline gate dielectric layer.
Dependencies are inferred from the claim text.