Method of forming high-density arrays of nanostructures
AssigneeInternational Business Machines Corporation
InventorsChristos D. Dimitrakopoulos, Jeehwan Kim, Hongsik Park, Byungha Shin
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Abstract
A method for forming nanostructures includes bonding a flexible substrate to a crystalline semiconductor layer having a two-dimensional material formed on a side opposite the flexible substrate. The crystalline semiconductor layer is stressed in a first direction to initiate first cracks in the crystalline semiconductor layer. The first cracks are propagated through the crystalline semiconductor layer and through the two-dimensional material. The stress of the crystalline semiconductor layer is released to provide parallel structures including the two-dimensional material on the crystalline semiconductor layer.
Claims20
A method for forming nanostructures, comprising:
- bonding a flexible substrate to a crystalline semiconductor layer having a two-dimensional material formed on a side opposite the flexible substrate;
- stressing the crystalline semiconductor layer in a first direction to initiate first cracks in the semiconductor layer;
- propagating the first cracks through the semiconductor layer and through the two-dimensional material;
- and
- releasing stress on the semiconductor layer to provide parallel structures including the two-dimensional material on the semiconductor layer.
A method for forming nanostructures, comprising:
- providing a monocrystalline semiconductor substrate;
- forming at least two monolayers of a two-dimensional material on the substrate;
- epitaxially growing a crystalline semiconductor layer over the two-dimensional material;
- bonding a flexible substrate to the crystalline semiconductor layer;
- separating the substrate from the crystalline semiconductor layer, which is bonded to the flexible substrate by splitting the two dimensional material;
- stressing the crystalline semiconductor layer in a first direction to initiate first cracks in the crystalline semiconductor layer;
- propagating the first cracks through the crystalline semiconductor layer and through the two-dimensional material;
- and
- releasing stress on the crystalline semiconductor layer to provide parallel structures including the two-dimensional material on the crystalline semiconductor layer.
Dependencies are inferred from the claim text.