Back to results
US 9,312,130 B2Granted
Surface doping and bandgap tunability in hydrogenated graphene
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsJeffrey W. Baldwin, Bernard R. Matis, James S. Burgess, Felipe Bulat-Jara, Adam L. Friedman, Brian H Houston
Life of this patent
Estimating the term…
Abstract
A method of introducing a bandgap in single layer graphite on a SiO2 substrate comprising the steps of preparing graphene flakes and CVD grown graphene films on a SiO2/Si substrate and performing hydrogenation of the graphene. Additionally, controlling the majority carrier type via surface adsorbates.
Claims6
A method of introducing a bandgap in single layer graphene on a SiO2 substrate comprising the steps of:
- preparing graphene flakes or chemical vapor deposition grown graphene films on a SiO2/Si substrate;
- exposing the graphene flakes or the chemical vapor deposition grown graphene film to hydrogen plasma;
- performing hydrogenation of the graphene;
- wherein the hydrogenated graphene has a majority carrier type;
- creating a bandgap from the hydrogenation of the graphene;
- applying an electric field to the hydrogenated graphene;
- and
- tuning the bandgap.
5 more elements
A method of hydrogenating graphene and forming a bandgap comprising the steps of:
- preparing exfoliated graphene flakes or a chemical vapor deposition (CVD) grown graphene film on a SiO2/Si substrate;
- depositing contact electrodes on the exfoliated graphene flakes or the CVD grown graphene films;
- exposing the exfoliated graphene flakes or the chemical vapor deposition grown graphene film to hydrogen plasma;
- hydrogenating the exfoliated graphene flakes or the CVD grown graphene films;
- creating a bandgap from the step of hydrogenating the graphene;
- applying an electric field to the hydrogenated graphene;
- and
- tuning the bandgap.
5 more elements
Dependencies are inferred from the claim text.