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US 9,312,129 B2Granted
Group III-V substrate material with particular crystallographic features and methods of making
AssigneeSaint-Gobain Cristaux Et Detecteurs
InventorsJean-Pierre Faurie, Bernard Beaumont
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Abstract
A method of forming a semiconductor substrate including providing a base substrate including a semiconductor material, and forming a first semiconductor layer overlying the base substrate having a Group 13-15 material via hydride vapor phase epitaxy (HVPE), the first semiconductor layer having an upper surface having a N-face orientation.
Claims20
A method of forming a semiconductor substrate comprising:
- providing a base substrate comprising a semiconductor material;
- and
- forming a first semiconductor layer overlying the base substrate comprising a Group 13-15 material via hydride vapor phase epitaxy (HVPE), wherein the first semiconductor layer comprises an upper surface having a N-face orientation and comprising a plurality of protrusions, wherein the protrusions have a height ratio (h/ti) of not greater than about 0.2, wherein h represents an average height of the plurality of protrusions and ti, represents an average thickness of the first semiconductor layer.
A method of forming a series of semiconductor substrates using a single forming process, the method comprising:
- providing a base substrate comprising a semiconductor material comprising nitrogen, wherein the base substrate comprises a growth surface having a N-face orientation;
- forming a boule overlying the base substrate, wherein the boule comprises:
- a first semiconductor layer overlying the base substrate;
- a first release layer overlying the first semiconductor layer;
- a second semiconductor layer overlying the first release layer;
- a second release layer overlying the second semiconductor layer;
- and
- separating the first and second semiconductor layers to form a plurality of discrete semiconductor substrates, wherein the first release layer has a first absorption coefficient such that the first release layer absorbs greater than 50% of a first wavelength of radiation, and the second release layer has a second absorption coefficient such that the second release layer transmit substantially all of the radiation of the first wavelength.
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Dependencies are inferred from the claim text.