Method for producing semiconductor apparatus substrate

A method for producing a semiconductor apparatus substrate comprising the steps of:

• (1) forming an organic under layer film on a substrate to be processed for producing a semiconductor apparatus, and applying a composition for forming a silicon-containing film on the organic under layer film, followed by heating, to form a silicon-containing film having a silicon content of 1% by mass or more and 30% by mass or less;
• (2) applying a resist composition on the silicon-containing film to form a resist film, the resist composition containing a polymer whose polarity is changed by an acid action to change solubility thereof in a developer;
• (3) forming a resist pattern by exposing and developing the resist film;
• (4) transferring the pattern to the silicon-containing film by dry etching using the resist pattern as a dry etching mask;
• (5) transferring the pattern to the organic under layer film by dry etching using the silicon-containing film to which the pattern has been transferred as a dry etching mask, to leave a part of or all of the silicon-containing film after the pattern transferring, on the organic under layer film to which the pattern has been transferred;
• (6) implanting ions into the substrate to be processed for producing a semiconductor apparatus using the organic under layer film to which the pattern has been transferred as a mask;
• and
• (7) peeling the organic under layer film used as the mask for ion implantation on which a part of or all of the silicon-containing film remains, with a peeling liquid.