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US 9,312,120 B2Granted
Method for processing an oxygen containing semiconductor body
AssigneeInfineon Technologies AG
InventorsHans-Joachim Schulze, Helmut Oefner
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Abstract
A method for processing a semiconductor body is disclosed. In an embodiment, the method includes reducing an oxygen concentration in a silicon wafer in a first region adjoining a first surface of the silicon wafer by a first heat treatment, creating vacancies in a crystal lattice of the wafer at least in a second region adjoining the first region by implanting particles via the first surface into the wafer and forming oxygen precipitates in the second region by a second heat treatment.
Claims25
A method, comprising:
- reducing an oxygen concentration in a silicon wafer in a first region adjoining a first surface of the silicon wafer by a first heat treatment;
- creating vacancies in a crystal lattice of the wafer at least in a second region adjoining the first region by implanting particles via the first surface into the wafer;
- and
- forming oxygen precipitates in the second region by a second heat treatment.
1 more element
A semiconductor wafer comprising:
- a first surface;
- a first region, a second region, and a third region,
- wherein the first region adjoins the first surface, and wherein the second region is between the first region and the third region,
- wherein a minimum concentration of oxygen precipitates in the third region is higher than a maximum concentration of oxygen precipitates in the first region, and
- wherein a minimum concentration of oxygen precipitates in the second region is higher than a maximum concentration of oxygen precipitates in the third region.
2 more elements
Dependencies are inferred from the claim text.