Apparatus and method for processing substrate using ion beam
AssigneeCanon Anelva Corporation
InventorsYasushi Kamiya, Einstein Noel Abarra, Yuta Konno
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Abstract
A method of processing a substrate in an apparatus including a substrate holder which holds the substrate, an ion source which emits an ion beam, a neutralizer which emits electrons, and a shutter which is arranged between a space in which the ion source and the neutralizer are arranged and a space in which the substrate holder is arranged, and configured to shield the ion beam traveling toward the substrate, includes adjusting an amount of electrons which are emitted by the neutralizer and reach the substrate holder during movement of the shutter.
Claims8
An ion etching method of etching a substrate, arranged on a substrate holder, using an ion beam etching apparatus including an ion source which emits an ion beam toward the substrate holder, a neutralizer which emits electrons toward the ion beam, and a shutter capable of moving between a closed position at which the ion beam emitted by the ion source toward the substrate holder is shielded, and an open position at which the ion beam emitted by the ion source toward the substrate holder is not shielded,
- the method comprising:
- when the shutter moves from the closed position to the open position,
- a first step of gradually decreasing an amount of the electrons emitted by the neutralizer while keeping an amount of the ion beam emitted by the ion source constant;
- and then
- a second step of gradually increasing the amount of the electrons emitted by the neutralizer while keeping the amount of the ion beam emitted by the ion source to be equal to the amount of the ion beam emitted by the ion source in the first step;
- wherein the ion source, the neutralizer and the shutter are arranged such that the electrons emitted by the neutralizer can partially reach the substrate when the shutter is arranged at the closed position.
An ion etching method of etching a substrate, arranged on a substrate holder, using an ion beam etching apparatus including an ion source which emits an ion beam toward the substrate holder from a plasma, a neutralizer which emits electrons toward the ion beam, and a shutter capable of moving between a closed position at which the ion beam emitted by the ion source toward the substrate holder is shielded, and an open position at which the ion beam emitted by the ion source toward the substrate holder is not shielded, wherein in the closed position, the plasma and the electrons can partially reach the substrate holder;
- the method comprising the following steps which are implemented while emitting the ion beam from the ion source:
- when the shutter is in the closed position, emitting electrons from the neutralizer such that the plasma and the electrons can partially reach the substrate holder;
- when the shutter is starting to move from the closed position to the open position, gradually decreasing an amount of the electrons emitted by the neutralizer;
- and then
- before the shutter is fully opened, gradually increasing the amount of the electrons emitted by the neutralizer.
Dependencies are inferred from the claim text.