Method of operating nonvolatile memory device controlled by controlling coupling resistance value between bit line and page buffer

A method of operating a nonvolatile memory device, the method comprising:

• determining whether even memory cells coupled to even bit lines and odd memory cells coupled to odd bit lines in a selected page are programmed;
• setting a coupling resistance value between the even bit line and a page buffer as a first level or a second level depending on whether the even memory cells and the odd memory cells are programmed;
• performing a read operation for the even memory cells by coupling the even bit line to the page buffer to the first level of the coupling resistance value when the even memory cells and the odd memory cells are not programmed;
• setting a coupling resistance value between the odd bit line and the page buffer as the first level;
• and
• performing a read operation for the odd memory cells by coupling the even bit line to the page buffer to the first level of the coupling resistance value.