Back to results
US 9,312,023 B2Granted
Devices and methods of programming memory cells
AssigneeMicron Technology, Inc.
InventorsKoichi Kawai, Koji Sakui, Peter Feeley
Life of this patent
Estimating the term…
Abstract
Devices and methods of programming memory cells, both SLC and MLC, such as to reduce charge-storage structure to charge-storage structure coupling, are shown and described. Programming of memory cells can include comparing a first page of data to a second page of data, and further programming cells corresponding to the first page of data that will not likely be affected by coupling from programming the second page of data.
Claims20
A method of programming memory cells, comprising:
- programming a first page of data;
- determining a coupling effect of programming a second page of data after programming the first page of data and prior to programming the second page of data, wherein each memory cell corresponding to the first page of data and a respective adjacent memory cell corresponding to the second page of data are connected in series;
- and
- adjusting programming of the first page of data responsive to a comparison of the determined coupling effect and a threshold;
- wherein adjusting the programming of the first page of data comprises:
- adjusting programming for each memory cell corresponding to the first page of data that is programmed to a threshold voltage level above a particular threshold voltage level when its adjacent memory cell corresponding to the second page of data is to be programmed to a threshold voltage level below the particular threshold voltage level such that the determined coupling effect is less than the threshold;
- and
- not adjusting programming for any memory cell corresponding to the first page of data that is programmed to a threshold voltage level below the particular threshold voltage level and for any memory cell corresponding to the first page of data when the adjacent memory cell corresponding to the second page of data is to be programmed to a threshold voltage level above the particular threshold voltage level such that the determined coupling effect is greater than the threshold.
5 more elements
A method of programming memory cells, comprising:
- programming an even page of data;
- loading an odd page of data;
- reading the even page of data;
- determining a coupling effect of programming the odd page of data on the programmed even page of data prior to programming the odd page of data, wherein each memory cell corresponding to the even page of data and a respective adjacent memory cell corresponding to the odd page of data are connected in series;
- further programming data of the even page responsive to the respective determined coupling effect being less than a threshold;
- and
- programming the odd page of data after further programming the data of the even page;
- wherein further programming data of the even page comprises:
- further programming each memory cell corresponding to the even page of data that is programmed to a threshold voltage level above a particular threshold voltage level when its adjacent memory cell corresponding to the odd page of data is to be programmed to a threshold voltage level below the particular threshold voltage level;
- and
- inhibiting programming for any memory cell corresponding to the even page of data that is programmed to a threshold voltage level below the particular threshold voltage level and for any memory cell corresponding to the even page of data when the adjacent memory cell corresponding to the odd page of data is to be programmed to a threshold voltage level above the particular threshold voltage level.
8 more elements
A device, comprising:
- memory cells;
- and
- a controller configured to perform a method comprising:
- programming a first page of data;
- determining a coupling effect of programming a second page of data after programming the first page of data and prior to programming the second page of data, wherein each memory cell corresponding to the first page of data and a respective adjacent memory cell corresponding to the second page of data are connected in series;
- and
- adjusting programming of the first page of data responsive to a comparison of the determined coupling effect and a threshold;
- wherein adjusting the programming of the first page of data comprises:
- adjusting programming for each memory cell corresponding to the first page of data that is programmed to a threshold voltage level above a particular threshold voltage level when its adjacent memory cell corresponding to the second page of data is to be programmed to a threshold voltage level below the particular threshold voltage level such that the determined coupling effect is less than the threshold;
- and
- not adjusting programming for any memory cell corresponding to the first page of data that is programmed to a threshold voltage level below the particular threshold voltage level and for any memory cell corresponding to the first page of data when the adjacent memory cell corresponding to the second page of data is to be programmed to a threshold voltage level above the particular threshold voltage level such that the determined coupling effect is greater than the threshold.
8 more elements
A device, comprising:
- memory cells;
- and
- a controller configured to:
- program an even page of data;
- load an odd page of data;
- read the even page of data;
- determine a coupling effect of programming the odd page of data on the programmed even page of data prior to programming the odd page of data, wherein each memory cell corresponding to the even page of data and a respective adjacent memory cell corresponding to the odd page of data are connected in series;
- further program data of the even page responsive to the respective determined coupling effect being less than a threshold;
- and
- program the odd page of data after further programming the data of the even page;
- wherein the controller is further configured to:
- further program each memory cell corresponding to the even page of data that is programmed to a threshold voltage level above a particular threshold voltage level when its adjacent memory cell corresponding to the odd page of data is to be programmed to a threshold voltage level below the particular threshold voltage level;
- and
- inhibit programming for any memory cell corresponding to the even page of data that is programmed to a threshold voltage level below the particular threshold voltage level and for any memory cell corresponding to the even page of data when the adjacent memory cell corresponding to the odd page of data is to be programmed to a threshold voltage level above the particular threshold voltage level.
11 more elements
Dependencies are inferred from the claim text.