Methods of operating memory devices
AssigneeMicron Technology, Inc.
InventorNicholas Hendrickson
Life of this patent
Estimating the term…
Abstract
Methods of operating a memory device include applying an increasing sense voltage to a plurality of memory cells, wherein memory cells of the plurality of memory cells each store data states representing two or more digits of data. The methods further include, in response to the increasing sense voltage reaching a particular level, initiating a transfer of data values of a particular digit of data for each memory cell of the plurality of memory cells while continuing to apply the increasing sense voltage to the plurality of memory cells.
Claims20
A method of operating a memory device, comprising:
- applying an increasing sense voltage to a plurality of memory cells, wherein memory cells of the plurality of memory cells each store data states representing two or more digits of data;
- and
- in response to the increasing sense voltage reaching a particular level, initiating a transfer of data values of a particular digit of data for each memory cell of the plurality of memory cells while continuing to apply the increasing sense voltage to the plurality of memory cells.
A method of operating a memory device storing data states in memory cells, with each data state representing two or more digits of data, the method comprising:
- applying an increasing sense voltage to control gates of a plurality of memory cells selected for a read operation, wherein each memory cell of the plurality of memory cells stores a respective data state representing two or more digits of data;
- in response to the increasing sense voltage reaching a first level, initiating a transfer of data values of a first digit of data for each memory cell of the plurality of memory cells while continuing to apply the increasing sense voltage to the plurality of memory cells;
- and
- in response to the increasing sense voltage reaching a second level greater than the first level, initiating a transfer of data values of a second digit of data for each memory cell of the plurality of memory cells.
A method of operating a memory device storing data states in memory cells, with each data state representing two or more digits of data, the method comprising:
- applying an increasing sense voltage to control gates of a plurality of memory cells selected for a read operation, wherein each memory cell of the plurality of memory cells stores a respective data state representing two or more digits of data;
- in response to the increasing sense voltage reaching a first level, initiating a transfer of data values of a first digit of data for each memory cell of the plurality of memory cells while continuing to apply the increasing sense voltage to the plurality of memory cells;
- in response to the increasing sense voltage reaching a second level greater than the first level, initiating a transfer of data values of a second digit of data for each memory cell of the plurality of memory cells while continuing to apply the increasing sense voltage to the plurality of memory cells;
- and
- in response to the increasing sense voltage reaching a third level greater than the second level, initiating a transfer of data values of a third digit of data for each memory cell of the plurality of memory cells.
Dependencies are inferred from the claim text.