Configuration method of erase operation, memory controlling circuit unit and memory storage device
AssigneePhison Electronics Corp.
InventorsWei Lin, Yu-Cheng Hsu, An-Cheng Liu, Siu-Tung Lam
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Abstract
A configuration method of erase operation, a memory controlling circuit unit, and a memory storage device are provided. The method includes: determining whether a first use state of a first physical unit conforms to a first default state; and if the first use state conforms to the first default state, adjusting a first erase operation corresponding to the first physical unit from using a first mode to a second mode. Thereby, a threshold voltage distribution of memory cells in an erase state may be maintained in a proper range.
Claims25
A configuration method of erase operation for a rewritable non-volatile memory module comprising a plurality of physical units, the configuration method of erase operation comprising:
- determining whether a first use state of a first physical unit of the physical units conforms to a first default state;
- adjusting a first erase operation corresponding to the first physical unit from using a first mode to a second mode if the first use state conforms to the first default state, wherein the first mode and the second mode are different;
- and
- maintaining the first erase operation in using the first mode if the first use state does not conform to the first default state.
A memory storage device, comprising:
- a connection interface unit, configured to couple to a host system;
- a rewritable non-volatile memory module comprising a plurality of physical units;
- and
- a memory controlling circuit unit, coupled to the connection interface unit and the rewritable non-volatile memory module,
- wherein the memory controlling circuit unit is configured to determine whether a first use state of a first physical unit of the physical units conforms to a first default state,
- wherein the memory controlling circuit unit is further configured to transmit an erase mode adjustment command if the first use state conforms to the first default state, wherein the erase mode adjustment command instructs to adjust a first erase operation corresponding to the first physical unit from using a first mode to a second mode, wherein the first mode and the second mode are different,
- wherein the memory controlling circuit unit is further configured to maintain the first erase operation in using the first mode if the first use state does not conform to the first default state.
A memory controlling circuit unit for controlling a rewritable non-volatile memory module comprising a plurality of physical units, the memory controlling circuit unit comprising:
- a host interface, configured to couple to a host system;
- a memory interface, configured to couple to the rewritable non-volatile memory module;
- and
- a memory management circuit, coupled to the host interface and the memory interface,
- wherein the memory management circuit is configured to determine whether a first use state of a first physical unit of the physical units conforms to a first default state,
- wherein the memory management circuit is further configured to transmit an erase mode adjustment command if the first use state conforms to the first default state, wherein the erase mode adjustment command instructs to adjust a first erase operation corresponding to the first physical unit from using a first mode to a second mode, wherein the first mode and the second mode are different,
- wherein the memory management circuit is further configured to maintain the first erase operation in using the first mode if the first use state does not conform to the first default state.
Dependencies are inferred from the claim text.