Non-volatile ternary content-addressable memory with resistive memory device
AssigneeNational Tsing Hua University
InventorsMeng-Fan Chang, Ching-Hao Chuang
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Abstract
A scheme for non-volatile ternary content-addressable memory with resistive memory device is proposed. The non-volatile ternary content-addressable memory comprises five transistors including a pair of search transistors with a first search transistor and a second search transistor, a read transistor, a write transistor and a match line transistor, wherein a match line is coupled to the match line transistor; and a pair of variable resistances have a first variable resistance and a second variable resistance. The pair of search transistors is coupled to the pair of variable resistances.
Claims13
A non-volatile ternary content-addressable memory with resistive memory device, comprising:
- five transistors including a pair of search transistors with a first search transistor and a second search transistor, a read transistor, a write transistor and a match line transistor, wherein a match line is coupled to said match line transistor;
- and
- a pair of variable resistances having a first variable resistance and a second variable resistance;
- wherein a second terminal of said pair of variable resistances is coupled to one first terminal of three terminals in said read transistor, said write transistor and said match line transistor;
- wherein a first terminal of said first variable resistance is coupled to one second terminal of three terminals in said first search transistor and said second search transistor;
- the others terminal of three terminals in each transistor of said five transistors connect whether to a voltage source, a control signal or floating.
A method of search operation for a non-volatile ternary content-addressable memory with resistive memory device, comprising:
- applying a precharge signal to pre-charge a match line from a relatively low voltage to a working voltage;
- applying a relatively high voltage to one of a pair of search transistors via a search line or search line bar during one cycle;
- and
- when a voltage level at a node prior to a gate of a match line transistor is larger than a threshold voltage of said match line transistor, a mismatch is obtained;
- when said voltage level at said node prior to said gate of said match line transistor is smaller than said threshold voltage of said match line transistor, a match is obtained;
- wherein said match line is coupled to said match line transistor;
- wherein a first and a second variable resistance are to provide said node to said gate of said match line transistor, said read transistor and said write transistor.
Dependencies are inferred from the claim text.