Semiconductor apparatus
AssigneeSK hynix Inc.
InventorHyun Min Song
Life of this patent
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Abstract
A semiconductor apparatus includes first and second variable resistors, a variable resistor selection unit and a threshold voltage adjustment unit. The variable resistor selection unit includes a plurality of transistors suitable for electrically coupling each of the first and second variable resistors to a sense amplifier in response to resistor selection signals. The threshold voltage adjustment unit provides a first voltage to bulks of the plurality of transistors during a read operation, and a second voltage that is different than the first voltage to the bulks of the plurality of transistors during operations other than the read operation.
Claims20
A semiconductor apparatus comprising:
- a first variable resistor;
- a second variable resistor;
- a variable resistor selection unit including a plurality of transistors suitable for electrically coupling each of the first and second variable resistors to a sense amplifier in response to resistor selection signals;
- and
- a threshold voltage adjustment unit suitable for providing a first voltage to bulks of the plurality of transistors during a read operation, and a second voltage, which is different than the first voltage, to the bulks of the plurality of transistors during operations other than the read operation.
A semiconductor apparatus comprising:
- a column selection unit suitable for electrically coupling a bit line, which is coupled to a memory cell, to a sense amplifier in response to a column selection signal;
- and
- a threshold voltage adjustment unit suitable for providing one of a first voltage and a second voltage, which is different from the first voltage, as a bulk bias voltage of the column selection unit in response to a read signal.
A semiconductor apparatus comprising:
- a memory block including a plurality of memory cells;
- a column selection unit coupled between a sense amplifier and the plurality of memory cells, and suitable for selecting one of a plurality of bit lines, which are respectively coupled to the plurality of memory cells, in response to column selection signals;
- and
- a threshold voltage adjustment unit suitable for providing a first voltage as a bulk bias voltage of the column selection unit during a read operation, and a second voltage, which is different than the first voltage, as the bulk bias voltage of the column selection unit during operations other than the read operation.
Dependencies are inferred from the claim text.