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US 9,311,996 B2Granted
Semiconductor storage device having resistance-change storage elements
AssigneeKabushiki Kaisha Toshiba
InventorsRyu Ogiwara, Daisaburo Takashima
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Abstract
A semiconductor storage device according to an embodiment includes a plurality of resistance-change storage elements. A plurality of bit lines are connected to the storage elements, respectively. A voltage control circuit controls a decreasing rate of an absolute value of a voltage of a selected bit line among the bit lines when data is written to one of the storage elements.
Claims19
A semiconductor storage device comprising:
- a plurality of resistance-change storage elements;
- a plurality of bit lines connected to the storage elements, respectively;
- and
- a voltage control circuit controlling a decreasing rate of an absolute value of a voltage of a selected bit line among the bit lines when data is written to one of the storage elements, wherein
- the voltage control circuit comprises:
- a plurality of current supply paths supplying a current to the selected bit line when data is written to one of the storage elements;
- and
- a plurality of current control switches between the current supply paths corresponding thereto, respectively, and the selected bit line, wherein
- the current supply paths are disconnected from the selected bit line by the current control switches, respectively, in time series when an absolute value of a voltage of the selected bit line is to be decreased after being increased in a data write operation.
6 more elements
Dependencies are inferred from the claim text.