Word line supply voltage generator for a memory device and method therefore

A word line driver circuit in a memory device that includes an array of memory cells arranged in rows and columns, the word line driver circuit comprising:

• a node that includes capacitance configured to store charge corresponding to a word line supply voltage;
• a voltage generator coupled to the node, the voltage generator configured to provide charge to the node such that, at a target charge level, the word line supply voltage is greater than a logic supply voltage for the memory device;
• line driver circuitry coupled to the node, the line driver circuitry configured to drive a word line using the word line supply voltage during performance of an operation in the memory device that is sensitive to variations on a voltage level on the word line, wherein the word line corresponds to a set of memory cells included the array of memory cells;
• and
• control circuitry coupled to the line driver circuitry and the voltage generator, the control circuitry configured to:
• deactivate the voltage generator in response to a signal transition signaling a beginning of the operation that is sensitive to variations on a voltage level on the word line;
• maintain the voltage generator in a deactivated state when the line driver circuitry is driving the word line using the word line supply voltage during the operation that is sensitive to variations on the voltage level on the word line;
• and
• reactivate the voltage generator based on a determination that the operation is complete.

A magnetic memory device comprising:

• an array of magnetic memory cells arranged in rows and columns;
• a plurality of word lines, each word line of the plurality of word lines corresponding to a respective row of the rows;
• self-referenced read circuitry coupled to the array of memory cells, the self-referenced read circuitry configured to sense a state corresponding to each memory cell in a selected set of memory cells during a sensing operation, wherein the sensing operation is sensitive to variations in a word line voltage on a selected word line corresponding to the selected row;
• a node that includes capacitance configured to store charge corresponding to a word line supply voltage;
• a charge pump coupled to the node, the charge pump configured to provide charge to the node such that, at a target charge level, the word line supply voltage is greater than a logic supply voltage for the memory device;
• word line driver circuitry coupled to the node and the selected word line, the word line driver circuitry configured to drive the word line voltage onto the selected word line using the word line supply voltage when the selected row is selected for the sensing operation;
• and
• control circuitry coupled to the word line driver circuitry and the charge pump, the control circuitry configured to deactivate the charge pump when the word line driver circuitry is driving the selected word line during the sensing operation.