Production-test die temperature measurement method and apparatus
AssigneeFreescale Semiconductor, Inc.
InventorsRicardo P. Coimbra, Edevaldo Pereira Da Silva, Jr., Pedro B. Zanetta
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AssigneeFreescale Semiconductor, Inc.
InventorsRicardo P. Coimbra, Edevaldo Pereira Da Silva, Jr., Pedro B. Zanetta
Estimating the term…
A die temperature measurement system (300) includes an external test environment setup (352) and an integrated circuit (302). The external test environment setup (352) includes means to force and accurately measure electrical variables. The integrated circuit (302) includes a bipolar transistor (325); a selectable switch (340) for selecting from plurality of integrated resistances (342, 344) to be coupled in series between a base (322) of the bipolar transistor and a first input (362); and a selectable-gain current mirror (310) with a gain, a programmable current-mirror output coupled to the collector (326) of the bipolar transistor. The bipolar transistor and optional diodes (335) are sequentially biased with a set of proportional collector current levels. For each bias condition, the temperature-dependent voltage produced by the structure is extracted and stored. Die temperature is obtained through algebraic manipulation (450) of this data. Parasitic resistance and I/O pad leakage effects are canceled.
A method to measure temperature in a temperature sensing circuit, the method comprising:
Dependencies are inferred from the claim text.