Systems, methods, and apparatus for production coatings of low-emissivity glass

A method for forming a low emissivity panel, the method comprising:

• providing a partially fabricated panel,
• the partially fabricated panel comprising a glass substrate, a reflective layer comprising Ag formed over the glass substrate, and a top dielectric layer formed over the reflective layer such that the reflective layer is formed between the substrate and the top dielectric layer, and
• wherein the top dielectric layer comprises zinc tin oxide;
• wherein tin of the top dielectric layer has an oxidation state of +4;
• forming an interface layer by reactive sputtering over the top dielectric layer,
• wherein the interface layer is in direct physical contact with both the to diffusion layer and the top dielectric layer,
• wherein the interface layer comprises one of titanium oxide or tantalum oxide and has a thickness of between about 2 nm and 8 nm, and wherein the interface layer has a band gap of at least 3.0 eV;
• and
• forming a top diffusion layer by sputtering over the interface layer,
• wherein the top diffusion layer comprises silicon nitride and is formed using reactive sputtering in a nitrogen plasma environment,
• wherein a material of the interface layer is at least about 50% amorphous, and
• forming a barrier layer disposed between the reflective layer and the top dielectric layer,
• wherein the barrier layer comprises nickel, titanium, and niobium, and
• wherein the barrier layer is in direct physical contact with both the reflective layer and the top dielectric layer.