Method and assembly including a connection between metal layers and a fusible material

A method, comprising:

• making a hole in a first component between two first component surfaces;
• establishing a first metal layer on a third surface of the first component inside the hole, the third surface at least partially defining the hole;
• establishing a second metal layer on a second component;
• situating a surface of the second component adjacent one of the first component surfaces;
• placing a fusible material at least partially in the hole;
• melting at least some of the fusible material in the hole, such that the fusible material at least partially contacts the first and second metal layers;
• and
• establishing a connection between the first and second metal layers with the melted fusible material.

An assembly, comprising:

• a first component including a hole between two first component surfaces, the hole including a first metal layer on the first component inside the hole;
• a second component including a second component surface adjacent one of the first component surfaces, the second component including a second metal layer on the second component;
• a fusible material at least partially in the hole and at least partially contacting the second metal layer, the fusible material establishing a connection between the first and second metal layers, the fusible material comprising a metal alloy;
• an electrically conductive member;
• and
• a second conductive member;
• wherein:
• the first component comprises a borosilicate wafer, and supports the electrically conductive member, which is at least partially exposed on the one of the first component surfaces;
• the electrically conductive member is spaced from the hole;
• the second metal layer is positioned on the second component such that the metal alloy contacts the first metal layer, the second metal layer and the conductive member;
• the metal alloy contacts the second conductive member;
• the metal alloy establishes an electrically conductive connection between the conductive member and the second conductive member;
• the second component comprises a silicon wafer and includes at least one channel configured to carry a fluid;
• the channel is open toward the one surface of the first component;
• and
• the conductive member comprises a heater element situated to selectively heat a fluid in the channel.

An assembly, comprising:

• a first component including a hole between two first component surfaces, the hole including a first metal layer the first component inside the hole;
• a second component including a second component surface adjacent one of the first component surfaces, the second component including a second metal layer on the second component;
• and
• a fusible material at least partially in the hole and at least partially contacting the second metal layer, the fusible material establishing a connection between the first and second metal layers;
• wherein the first component comprises a silicon substrate turning minor;
• wherein the second component comprises an optical waveguide component;
• and
• wherein the connection established by the fusible material provides a mechanical connection securing the silicon substrate turning mirror to the one surface of the optical waveguide component.