Apparatus and methods for continuous flow synthesis of semiconductor nanowires
AssigneeUS Nano LLC
InventorsAnthony C. Onicha, Louise E. Sinks, Stefanie L. Weber
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Abstract
Apparatuses and methods for synthesizing nanoscale materials are provided, including semiconductor nanowires. Precursor solutions include mixed reagent precursor solutions of metal and chalcogenide precursors and a catalyst, where such solutions are liquid at room temperature. The precursor solutions are mixed by dividing a solution flow into multiple paths and converging the paths to form a uniform solution. A thermally controlled reactor receives the uniform solution to form semiconductor nanowires. Various electronic, optical, and sensory devices may employ the semiconductor nanowires described herein, for example.
Claims11
A continuous flow method of producing nanowires, the method comprising:
- adding a metal precursor solution to a first continuous flow reactor;
- adding an anion precursor solution to the first continuous flow reactor;
- adding a catalyst precursor solution to the first continuous flow reactor;
- and
- creating a plurality of metal-anion nanowires having an average length of 1 to 40 μm, an average diameter of 1 to 100 nm, and an average aspect ratio (length to width ratio) of 10:1 to 1000:1;
- wherein the first continuous flow reactor is maintained at a temperature between, and including, 170° C. to 300° -C.
Dependencies are inferred from the claim text.