Stable amorphous metal oxide semiconductor
AssigneeCbrite Inc.
InventorsChan-Long Shieh, Gang Yu
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Abstract
A thin film semiconductor device has a semiconductor layer including a mixture of an amorphous semiconductor ionic metal oxide and an amorphous insulating covalent metal oxide. A pair of terminals is positioned in communication with the semiconductor layer and define a conductive channel, and a gate terminal is positioned in communication with the conductive channel and further positioned to control conduction of the channel. The invention further includes a method of depositing the mixture including using nitrogen during the deposition process to control the carrier concentration in the resulting semiconductor layer.
Claims9
A thin film semiconductor device comprising:
- a semiconductor layer including a mixture of an amorphous semiconductor ionic metal oxide with an energy gap less than approximately 4 ev and an amorphous insulating covalent metal oxide with an energy gap greater than approximately 6 ev;
- a pair of terminals positioned in communication with the semiconductor layer and defining a conductive channel;
- and
- a gate terminal in communication with the conductive channel and positioned to control conduction of the channel.
A thin film semiconductor device comprising:
- a semiconductor layer including a mixture of an amorphous semiconductor ionic metal oxide with an energy gap less than approximately 4 ev and an amorphous insulating covalent metal oxide with an energy gap greater than approximately 6 ev, wherein the amounts of amorphous semiconductor ionic metal oxide and the amorphous insulating covalent metal oxide are greater than 0% of the mixture and the amorphous insulating covalent metal oxide is greater than approximately 5% of the mixture, and wherein the amount of amorphous insulating covalent metal oxide is sufficiently large to prevent the amorphous semiconductor ionic metal oxide from becoming poly crystalline at processing temperatures and is sufficiently small to allow a continuous network of the amorphous semiconductor ionic metal oxide;
- a pair of terminals positioned in communication with the semiconductor layer and defining a conductive channel;
- and
- a gate terminal in communication with the conductive channel and positioned to control conduction of the channel.
Dependencies are inferred from the claim text.