High productivity combinatorial workflow to screen and design chalcogenide materials as non volatile memory current selector
AssigneeIntermolecular, Inc.
InventorImran Hashim
Life of this patent
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Abstract
Combinatorial workflow is provided for evaluating materials and processes for current selector devices in a cross point memory array. Blanket layers, metal-insulator-metal devices, and compete memory structures are combinatorially fabricated on multiple regions of a substrate, with each region having a different material and process condition for the current selector devices. The current selector devices are then characterized, and the data are compared to obtain the optimum materials and processes.
Claims18
A method for development of cross point memory arrays, the method comprising:
- forming a first layer over a substrate,
- wherein the first layer comprises a chalcogenide material positioned in different site isolated regions of the substrate,
- wherein a process condition used for forming the first layer is varied in a combinatorial manner between the different site isolated regions,
- wherein the first layer is operable as an ovonic threshold switch;
- and
- forming a first electrode over the first layer.
A method for the development of cross point memory arrays, the method comprising:
- defining site isolated regions on a substrate;
- forming a first layer in each of the site isolated regions,
- wherein the first layer comprises a chalcogenide material,
- wherein the first layer is operable as an ovonic threshold switch,
- wherein a process condition of the first layer formation is varied in a combinatorial manner between the site isolated regions;
- and
- measuring a structural characteristic of the first layer within each site isolated region.
A method for the development of cross point memory arrays, the method comprising:
- defining a plurality of site isolated regions on a substrate;
- forming a first electrode in each site isolated region;
- forming a first layer over the first electrode in each of the site isolated regions,
- wherein the first layer comprises a chalcogenide material,
- wherein the first layer is operable as an ovonic threshold switch,
- wherein a process condition of the first layer formation is varied in a combinatorial manner between the site isolated regions;
- forming a second electrode over the first layer,
- measuring an electrical characteristic of the first layer within each site isolated region.
Dependencies are inferred from the claim text.