Write operation method and device for phase change memory

A write operation device for a phase change memory, comprising:

• a generating circuit configured to, when the phase change memory performs a write operation, generate a corresponding voltage pulse signal according to to-be-written data, and apply the voltage pulse signal to a phase change material comprised in a phase change storage unit corresponding to the to-be-written data and apply the voltage pulse signal to a voltage divider resistor serially connected to the phase change material;
• a comparator configured to compare voltage values at both ends of a sampling resistor with a threshold voltage to generate an indicator value, wherein the indicator value is corresponding to data stored in the phase change storage unit;
• a first control circuit configured to determine, according to the indicator value, whether the data that is stored in the phase change storage unit and is corresponding to the indicator value is the same as the to-be-written data;
• and
• a first write circuit configured to skip writing the to-be-written data into the phase change storage unit corresponding to the to-be-written data when the data that is stored in the phase change storage unit and is corresponding to the indicator value is the same as the to-be-written data, and write the to-be-written data into the phase change storage unit corresponding to the to-be-written data when the data that is stored in the phase change storage unit and is corresponding to the indicator value is different from the to-be-written data,
• wherein the generating circuit comprises:
• a second write circuit configured to write the to-be-written data into a latch comprised in the phase change memory;
• a gating circuit configured to gate, according to a row address and a column address of the to-be-written data, the phase change storage unit corresponding to the to-be-written data;
• a read/write circuit configured to generate the corresponding voltage pulse signal according to the to-be-written data that is stored in the latch;
• and
• a second control circuit configured to generate a valid enable signal to apply the voltage pulse signal to the phase change material comprised in the gated phase change storage unit and apply the voltage pulse signal to the voltage divider resistor serially connected to the phase change material.

A write operation method for a phase change memory, comprising:

• generating a corresponding voltage pulse signal according to to-be-written data when the phase change memory performs a write operation;
• applying the voltage pulse signal to a phase change material comprised in a phase change storage unit corresponding to the to-be-written data when the phase change memory performs the write operation;
• applying the voltage pulse signal to a voltage divider resistor serially connected to the phase change material when the phase change memory performs the write operation;
• comparing voltage values at both ends of a sampling resistor with a threshold voltage to generate an indicator value, wherein the indicator value is corresponding to data stored in the phase change storage unit;
• determining, according to the indicator value, whether the data that is stored in the phase change storage unit and is corresponding to the indicator value is the same as the to-be-written data;
• skipping writing the to-be-written data into the phase change storage unit corresponding to the to-be-written data when the data that is stored in the phase change storage unit and is corresponding to the indicator value is the same as the to-be-written data;
• and
• writing the to-be-written data into the phase change storage unit corresponding to the to-be-written data when the data that is stored in the phase change storage unit and is corresponding to the indicator value is different from the to-be-written data,
• wherein when an output end of a read/write circuit is connected to one end of the voltage divider resistor, the other end of the voltage divider resistor is connected to one end of the phase change material, and the other end of the phase change material is connected to the ground by using a switching tube comprised in the phase change storage unit,
• wherein comparing the voltage values at both ends of the sampling resistor with the threshold voltage to generate the indicator value comprises comparing voltage values at both ends of the phase change material with the threshold voltage to generate the indicator value,
• wherein the threshold voltage is a demarcation voltage between two voltages separately presented by the phase change material when the data stored in the phase change storage unit is zero or one,
• wherein the indicator value is a first value when the data stored in the phase change storage unit is zero,
• wherein the indicator value is a second value when the data stored in the phase change storage unit is one, and
• wherein determining, according to the indicator value, whether the data that is stored in the phase change storage unit and is corresponding to the indicator value is the same as the to-be-written data comprises determining, according to that the indicator value is the first value or the second value, whether the data that is stored in the phase change storage unit and is corresponding to the indicator value is the same as the to-be-written data.

A write operation method for a phase change memory, comprising:

• generating a corresponding voltage pulse signal according to to-be-written data when the phase change memory performs a write operation;
• applying the voltage pulse signal to a phase change material comprised in a phase change storage unit corresponding to the to-be-written data when the phase change memory performs the write operation;
• applying the voltage pulse signal to a voltage divider resistor serially connected to the phase change material when the phase change memory performs the write operation;
• comparing voltage values at both ends of a sampling resistor with a threshold voltage to generate an indicator value, wherein the indicator value is corresponding to data stored in the phase change storage unit;
• determining, according to the indicator value, whether the data that is stored in the phase change storage unit and is corresponding to the indicator value is the same as the to-be-written data;
• skipping writing the to-be-written data into the phase change storage unit corresponding to the to-be-written data when the data that is stored in the phase change storage unit and is corresponding to the indicator value is the same as the to-be-written data;
• and
• writing the to-be-written data into the phase change storage unit corresponding to the to-be-written data when the data that is stored in the phase change storage unit and is corresponding to the indicator value is different from the to-be-written data,
• wherein when an output end of a read/write circuit is connected to one end of the phase change material, the other end of the phase change material is connected to one end of the voltage divider resistor by using a switching tube comprised in the phase change storage unit, and the other end of the voltage divider resistor is connected to the ground,
• wherein comparing the voltage values at both ends of the sampling resistor with the threshold voltage to generate the indicator value comprises comparing the voltage values at both ends of the voltage divider resistor with the threshold voltage to generate the indicator value,
• wherein the threshold voltage is a demarcation voltage between two voltages separately presented by the voltage divider resistor when the data stored in the phase change storage unit is zero or one,
• wherein the indicator value is a third value when the data stored in the phase change storage unit is zero,
• wherein the indicator value is a fourth value when the data stored in the phase change storage unit is one, and
• wherein determining, according to the indicator value, whether the data that is stored in the phase change storage unit and is corresponding to the indicator value is the same as the to-be-written data comprises determining, according to that the indicator value is the third value or the fourth value, whether the data that is stored in the phase change storage unit and is corresponding to the indicator value is the same as the to-be-written data.

A write operation method for a phase change memory, comprising:

• generating a corresponding voltage pulse signal according to to-be-written data when the phase change memory performs a write operation;
• applying the voltage pulse signal to a phase change material comprised in a phase change storage unit corresponding to the to-be-written data when the phase change memory performs the write operation;
• applying the voltage pulse signal to a voltage divider resistor serially connected to the phase change material when the phase change memory performs the write operation;
• comparing voltage values at both ends of a sampling resistor with a threshold voltage to generate an indicator value, wherein the indicator value is corresponding to data stored in the phase change storage unit;
• determining, according to the indicator value, whether the data that is stored in the phase change storage unit and is corresponding to the indicator value is the same as the to-be-written data;
• skipping writing the to-be-written data into the phase change storage unit corresponding to the to-be-written data when the data that is stored in the phase change storage unit and is corresponding to the indicator value is the same as the to-be-written data;
• and
• writing the to-be-written data into the phase change storage unit corresponding to the to-be-written data when the data that is stored in the phase change storage unit and is corresponding to the indicator value is different from the to-be-written data,
• wherein generating the corresponding voltage pulse signal according to the to-be-written data, applying the voltage pulse signal to the phase change material comprised in the phase change storage unit corresponding to the to-be-written data, and applying the voltage pulse signal to the voltage divider resistor serially connected to the phase change material comprise:
• writing the to-be-written data into a latch comprised in the phase change memory;
• gating, according to a row address and a column address of the to-be-written data, the phase change storage unit corresponding to the to-be-written data;
• generating the corresponding voltage pulse signal according to the to-be-written data that is stored in the latch;
• and
• generating a valid enable signal to apply the voltage pulse signal to the phase change material comprised in the gated phase change storage unit and apply the voltage pulse signal to the voltage divider resistor serially connected to the phase change material,
• wherein skipping writing the to-be-written data into the phase change storage unit corresponding to the to-be-written data when the data that is stored in the phase change storage unit and is corresponding to the indicator value is the same as the to-be-written data, and writing the to-be-written data into the phase change storage unit corresponding to the to-be-written data when the data that is stored in the phase change storage unit and is corresponding to the indicator value is different from the to-be-written data comprise:
• setting the enable signal to invalid to stop applying the voltage pulse signal to the phase change material comprised in the phase change storage unit corresponding to the to-be-written data and stop applying the voltage pulse signal to the voltage divider resistor serially connected to the phase change material when the data that is stored in the phase change storage unit and is corresponding to the indicator value is the same as the to-be-written data;
• continuing to apply the voltage pulse signal to the phase change material comprised in the phase change storage unit corresponding to the to-be-written data and apply the voltage pulse signal to the voltage divider resistor serially connected to the phase change material to change a status of the phase change material comprised in the phase change storage unit when the data that is stored in the phase change storage unit and is corresponding to the indicator value is different from the to-be-written data;
• and
• writing the to-be-written data into the phase change storage unit corresponding to the to-be-written data when the status of the phase change material comprised in the phase change storage unit changes.

A write operation device for a phase change memory, comprising:

• a generating circuit configured to, when the phase change memory performs a write operation, generate a corresponding voltage pulse signal according to to-be-written data, and apply the voltage pulse signal to a phase change material comprised in a phase change storage unit corresponding to the to-be-written data and apply the voltage pulse signal to a voltage divider resistor serially connected to the phase change material;
• a comparator configured to compare voltage values at both ends of a sampling resistor with a threshold voltage to generate an indicator value, wherein the indicator value is corresponding to data stored in the phase change storage unit;
• a first control circuit configured to determine, according to the indicator value, whether the data that is stored in the phase change storage unit and is corresponding to the indicator value is the same as the to-be-written data;
• and
• a first write circuit configured to skip writing the to-be-written data into the phase change storage unit corresponding to the to-be-written data when the data that is stored in the phase change storage unit and is corresponding to the indicator value is the same as the to-be-written data, and write the to-be-written data into the phase change storage unit corresponding to the to-be-written data when the data that is stored in the phase change storage unit and is corresponding to the indicator value is different from the to-be-written data,
• wherein when an output end of the read/write circuit is connected to one end of the voltage divider resistor, the other end of the voltage divider resistor is connected to one end of the phase change material, and the other end of the phase change material is connected to the ground by using a switching tube comprised in the phase change storage unit,
• wherein the comparator is configured to compare voltage values at both ends of the phase change material with the threshold voltage to generate the indicator value,
• wherein the threshold voltage is a demarcation voltage between two voltages separately presented by the phase change material when the data stored in the phase change storage unit is zero or one,
• wherein the indicator value is a first value when the data stored in the phase change storage unit is zero,
• wherein the indicator value is a second value when the data stored in the phase change storage unit is one, and
• wherein the first control circuit is configured to determine, according to that the indicator value is the first value or the second value, whether the data that is stored in the phase change storage unit and is corresponding to the indicator value is the same as the to-be-written data.

A write operation device for a phase change memory, comprising:

• a generating circuit configured to, when the phase change memory performs a write operation, generate a corresponding voltage pulse signal according to to-be-written data, and apply the voltage pulse signal to a phase change material comprised in a phase change storage unit corresponding to the to-be-written data and apply the voltage pulse signal to a voltage divider resistor serially connected to the phase change material;
• a comparator configured to compare voltage values at both ends of a sampling resistor with a threshold voltage to generate an indicator value, wherein the indicator value is corresponding to data stored in the phase change storage unit;
• a first control circuit configured to determine, according to the indicator value, whether the data that is stored in the phase change storage unit and is corresponding to the indicator value is the same as the to-be-written data;
• and
• a first write circuit configured to skip writing the to-be-written data into the phase change storage unit corresponding to the to-be-written data when the data that is stored in the phase change storage unit and is corresponding to the indicator value is the same as the to-be-written data, and write the to-be-written data into the phase change storage unit corresponding to the to-be-written data when the data that is stored in the phase change storage unit and is corresponding to the indicator value is different from the to-be-written data,
• wherein when an output end of a read/write circuit is connected to one end of the phase change material, the other end of the phase change material is connected to one end of the voltage divider resistor by using a switching tube comprised in the phase change storage unit, and the other end of the voltage divider resistor is connected to the ground,
• wherein the comparator is configured to compare voltage values at both ends of the voltage divider resistor with the threshold voltage to generate the indicator value,
• wherein the threshold voltage is a demarcation voltage between two voltages separately presented by the voltage divider resistor when the data stored in the phase change storage unit is zero or one,
• wherein the indicator value is a third value when the data stored in the phase change storage unit is zero,
• wherein the indicator value is a fourth value when the data stored in the phase change storage unit is one, and
• wherein the first control circuit is configured to determine, according to that the indicator value is the third value or the fourth value, whether the data that is stored in the phase change storage unit and is corresponding to the indicator value is the same as the to-be-written data.

A write operation device for a phase change memory, comprising:

• a generating circuit configured to, when the phase change memory performs a write operation, generate a corresponding voltage pulse signal according to to-be-written data, and apply the voltage pulse signal to a phase change material comprised in a phase change storage unit corresponding to the to-be-written data and apply the voltage pulse signal to a voltage divider resistor serially connected to the phase change material;
• a comparator configured to compare voltage values at both ends of a sampling resistor with a threshold voltage to generate an indicator value, wherein the indicator value is corresponding to data stored in the phase change storage unit;
• a first control circuit configured to determine, according to the indicator value, whether the data that is stored in the phase change storage unit and is corresponding to the indicator value is the same as the to-be-written data;
• and
• a first write circuit configured to skip writing the to-be-written data into the phase change storage unit corresponding to the to-be-written data when the data that is stored in the phase change storage unit and is corresponding to the indicator value is the same as the to-be-written data, and write the to-be-written data into the phase change storage unit corresponding to the to-be-written data when the data that is stored in the phase change storage unit and is corresponding to the indicator value is different from the to-be-written data,
• wherein the generating circuit comprises:
• a second write circuit configured to write the to-be-written data into a latch comprised in the phase change memory;
• a gating circuit configured to gate, according to a row address and a column address of the to-be-written data, the phase change storage unit corresponding to the to-be-written data;
• a read/write circuit configured to generate the corresponding voltage pulse signal according to the to-be-written data that is stored in the latch;
• and
• a second control circuit configured to generate a valid enable signal to apply the voltage pulse signal to the phase change material comprised in the gated phase change storage unit and apply the voltage pulse signal to the voltage divider resistor serially connected to the phase change material,
• wherein the first write circuit comprises:
• a third control circuit configured to, when the data that is stored in the phase change storage unit and is corresponding to the indicator value is the same as the to-be-written data, set the enable signal to invalid to stop applying the voltage pulse signal to the phase change material comprised in the phase change storage unit corresponding to the to-be-written data and stop applying the voltage pulse signal to the voltage divider resistor serially connected to the phase change material;
• a fourth control circuit configured to, when the data that is stored in the phase change storage unit and is corresponding to the indicator value is different from the to-be-written data, continue to apply the voltage pulse signal to the phase change material comprised in the phase change storage unit corresponding to the to-be-written data and apply the voltage pulse signal to the voltage divider resistor serially connected to the phase change material to change a status of the phase change material comprised in the phase change storage unit;
• and
• a third write circuit configured to, when the status of the phase change material comprised in the phase change storage unit changes, write the to-be-written data into the phase change storage unit corresponding to the to-be-written data.