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US 9,299,835 B1Granted
Vertical field effect transistors
AssigneeInternational Business Machines Corporation
InventorsBrent A. Anderson, Edward J. Nowak
Life of this patent
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Abstract
Vertical field effect transistors (FETs) with minimum pitch and methods of manufacture are disclosed. The structure includes at least one vertical fin structure and gate material contacting with the at least one vertical fin structure. The structure further includes metal material in electrical contact with the ends of the at least one vertical fin.
Claims9
A structure, comprising:
- at least one vertical fin structure;
- gate material contacting with the at least one vertical fin structure;
- and
- source and drain contacts at ends of the at least one vertical fin structure comprising metal material in electrical contact with the ends of the at least one vertical fin,
- wherein the at least one vertical fin structure comprises:
- a first portion of the at least one vertical fin structure having a first dimension;
- a second portion of the at least one vertical fin structure with a second dimension narrower than the first dimension;
- and
- epitaxially grown semiconductor material forming a third portion with a third dimension wider than the second dimension.
6 more elements
A structure, comprising:
- at least one vertical fin structure;
- gate material contacting with the at least one vertical fin structure;
- source and drain contacts at ends of the at least one vertical fin structure comprising metal material in electrical contact with the ends of the at least one vertical fin;
- and
- an air gap in interlevel dielectric between the least two adjacent vertical fin structures, wherein:
- the at least one vertical fin structure comprises at least two adjacent vertical fin structures;
- and
- the gate material includes a gate dielectric material and a metal material on the at least two adjacent vertical fin structures, with a space between the at least two adjacent vertical fin structures.
5 more elements
Dependencies are inferred from the claim text.