Pattern-forming method, and radiation-sensitive composition

A pattern-forming method comprising:

• providing a resist film on a substrate using a radiation-sensitive composition;
• exposing the resist film;
• and
• developing the exposed resist film using a developer solution which comprises no less than 80% by mass of an organic solvent,
• wherein the radiation-sensitive composition comprises:
• a first polymer that comprises a structural unit comprising an acid-labile group;
• a radiation-sensitive acid generator;
• and
• a non-polymeric compound other than the radiation-sensitive acid generator,
• the non-polymeric compound being represented by formula (2):
• R1-A−X+ (2)
• wherein, in the formula (2),
• R1 represents a hydrogen atom or a monovalent organic group;
• A− represents —N−—SO2—RD, —COO−, —O− or —SO3−, wherein in a case where A− represents —SO3−, —SO3− does not directly bond to a carbon atom which bonds to a fluorine atom;
• RD represents a linear or branched monovalent hydrocarbon group having 1 to 10 carbon atoms or a cyclic monovalent hydrocarbon group having 3 to 20 carbon atoms, wherein a part or all of hydrogen atoms of the hydrocarbon group represented by RD may be substituted by a fluorine atom;
• and
• X+ represents an onium cation,
• wherein the non-polymeric compound generates an acid upon exposure, and the acid is weaker than an acid generated by the radiation-sensetive acid generator.