Imaging device and electronic apparatus
AssigneeSony Corporation
InventorHirotoshi Nomura
Life of this patent
Estimating the term…
Abstract
A solid-state imaging device includes a plurality of pixels each of which includes a photoelectric conversion unit that generates charges by photoelectrically converting light, and a transistor that reads a pixel signal of a level corresponding to the charges generated in the photoelectric conversion unit. A phase difference pixel which is at least a part of the plurality of pixels is configured in such a manner that the photoelectric conversion unit is divided into a plurality of photoelectric conversion units and an insulated light shielding film is embedded in a region for separating the plurality of photoelectric conversion units, which are divided, from each other.
Claims14
An imaging device comprising:
- a plurality of pixels each of which includes:
- a photoelectric conversion structure that generates charges by photoelectrically converting light;
- and
- a transistor that transfers a pixel signal of a level corresponding to the charges generated in the photoelectric conversion structure,
- wherein a phase difference pixel included in the plurality of pixels is configured in such a manner that the phase difference pixel is divided into a plurality of photoelectric conversion structures, wherein an insulated light shielding film is embedded in a region for separating, and wherein the insulated light shielding film is between the plurality of photoelectric conversion structures of the phase difference pixel.
An imaging device comprising:
- a plurality of pixels each of which includes
- a photoelectric conversion structure that generates charges by photoelectrically converting light;
- and
- a transistor that transfers a pixel signal of a level corresponding to the charges generated in the photoelectric conversion structure,
- wherein a phase difference pixel which is at least a part of the plurality of pixels is configured in such a manner that the phase difference pixel is divided into a plurality of photoelectric conversion structures and an insulated light shielding film is embedded in a region for separating the plurality of photoelectric conversion structures of the phase difference pixel from each other,
- wherein the phase difference pixel is divided into four photoelectric conversion structures,
- wherein a phase difference detection is performed based on the pixel signals corresponding to charges generated in a pair of the photoelectric conversion structures disposed in an oblique direction, among the four photoelectric conversion structures.
An imaging device comprising:
- a plurality of pixels each of which includes
- a photoelectric conversion structure that generates charges by photoelectrically converting light;
- and
- a transistor that transfers a pixel signal of a level corresponding to the charges generated in the photoelectric conversion structure,
- wherein a phase difference pixel which is at least a part of the plurality of pixels is configured in such a manner that the phase difference pixel is divided into a plurality of photoelectric conversion structures and an insulated light shielding film is embedded in a region for separating the plurality of photoelectric conversion structures of the phase difference pixel from each other,
- wherein the phase difference pixel is divided into four photoelectric conversion structures,
- wherein a phase difference detection is performed based on the pixel signals corresponding to charges generated in a pair of the photoelectric conversion structures disposed in a vertical direction or a horizontal direction, among the four photoelectric conversion structures.
An electronic apparatus comprising:
- an imaging device including
- a plurality of pixels each of which includes
- a photoelectric conversion structure that generates charges by photoelectrically converting light;
- and
- a transistor that transfers a pixel signal of a level corresponding to the charges generated in the photoelectric conversion structure,
- wherein a phase difference pixel included in the plurality of pixels include:
- a plurality of photoelectric conversion structures;
- and an insulated light shielding film, wherein the insulated light shielding film is embedded in a region for separating, and wherein the insulated light shielding film is between the plurality of photoelectric conversion structures.
Dependencies are inferred from the claim text.