Surface emitting laser device and atomic oscillator
AssigneeRicoh Company, Ltd.
InventorsHiroshi Motomura, Shunichi Sato
Life of this patent
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Abstract
Disclosed is a surface emitting laser device, including a substrate; a lower reflecting mirror provided on the substrate; an active layer provided on the lower reflecting mirror; an upper reflecting mirror provided on the active layer, including an emitting region, laser light being emitted from the emitting region, the upper reflecting mirror being formed by alternately laminating dielectrics, refracting indices of the dielectrics being different from each other; and an adjusting layer formed of semiconductor, provided in the emitting region between the active layer and the upper reflecting mirror, a shape of the adjusting layer in a plane parallel to a surface of the substrate including shape anisotropy in two mutually perpendicular directions.
Claims13
A surface emitting laser device, comprising:
- a substrate;
- a lower reflecting mirror provided on the substrate;
- an active layer provided on the lower reflecting mirror;
- an upper reflecting mirror provided on the active layer, the upper reflecting mirror being formed by alternately laminating dielectrics, refracting indices of the dielectrics being different from each other;
- an adjusting layer formed of semiconductor, provided in an emitting region between the active layer and the upper reflecting mirror, laser light being emitted from the emitting region, wherein
- a shape of the adjusting layer in a plane parallel to a surface of the substrate has shape anisotropy in two mutually perpendicular directions;
- a spacer layer provided between the active layer and the upper reflecting mirror;
- a contact layer formed of semiconductor, provided between the spacer layer and the upper reflecting mirror;
- and
- an electrode connected to the contact layer, wherein the adjusting layer is provided between the contact layer and the upper reflecting mirror.
A surface emitting laser device, comprising:
- a substrate;
- a lower reflecting mirror provided on the substrate;
- an active layer provided on the lower reflecting mirror;
- a first upper reflecting mirror provided on the active layer, the first upper reflecting mirror being formed by alternately laminating semiconductors, refracting indices of the semiconductors being different from each other;
- a second upper reflecting mirror provided on the first upper reflecting mirror, the second upper reflecting mirror being formed by alternately laminating dielectrics, refracting indices of the dielectrics being different from each other;
- an adjusting layer formed of semiconductor, provided in an emitting region between the first upper reflecting mirror and the second upper reflecting mirror, laser light being emitted from the emitting region, wherein
- a shape of the adjusting layer in a plane parallel to a surface of the substrate has shape anisotropy in two mutually perpendicular directions;
- a contact layer formed of semiconductor, provided between the first upper reflecting mirror and the second upper reflecting mirror;
- and
- an electrode connected to the contact layer, wherein the adjusting layer is provided between the contact layer and the second upper reflecting mirror.
Dependencies are inferred from the claim text.