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US 9,287,516 B2Granted
Forming pn junction contacts by different dielectrics
AssigneeInternational Business Machines Corporation
InventorsQing Cao, Shu-jen Han
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Abstract
A carbon nanotube transistor and method of manufacturing a carbon nanotube transistor is disclosed. The carbon nanotube transistor includes a carbon nanotube on a substrate, a gate electrode deposited on the carbon nanotube, and at least one of a source electrode and a drain electrode deposited on the carbon nanotube and separated from the gate electrode by a space region. The carbon nanotube is doped at the gate electrode an in the space region to form a p-n junction.
Claims12
A carbon nanotube transistor, comprising:
- a carbon nanotubes on a substrate;
- a gate structure deposited on the carbon nanotube, wherein the gate structure include a layer of first dielectric material for doping the carbon nanotube at the gate structure;
- a source electrode deposited on one end of the carbon nanotube and separated from the gate electrode by a first gap;
- a drain electrode deposited on an opposite end of the carbon nanotube and separated from the gate electrode by a second gap;
- a layer of second dielectric material formed in the first gap for doping the carbon nanotube in the first gap, wherein the second dielectric material is different from the first dielectric material;
- and
- a layer of the second dielectric material formed in the second gap for doping the carbon nanotube in the second gap;
- wherein the doped carbon nanotube forms a p-n junction at a transition between the gate structure and the first gap and at a transition between the gate structure and the second gap.
5 more elements
A carbon nanotube transistor, comprising:
- a carbon nanotube configured to traverse a gate channel between a source electrode and a drain electrode of the transistor;
- a gate structure deposited on the carbon nanotube in the gate channel to provide a first gap between the gate structure and the source electrode and a second gap between the gate structure and the drain electrode, wherein the gate structure includes a first dielectric material for doping the carbon nanotube at the gate structure;
- a layer of second dielectric material formed in the first gap for doping the carbon nanotube in the first gap, wherein the second dielectric material is different from the first dielectric material;
- and
- a layer of the second dielectric material formed in the second gap for doping the carbon nanotube in the second gap;
- wherein the doped carbon nanotube forms a p-n junction at a transition between the gate structure and the first gap and at a transition between the gate structure and the second gap.
3 more elements
Dependencies are inferred from the claim text.