Resistance variable memory cell structures and methods
AssigneeMicron Technology, Inc.
InventorsEugene P Marsh, Timothy A. Quick
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Abstract
Resistance variable memory cell structures and methods are described herein. One or more resistance variable memory cell structures include a first electrode common to a first and a second resistance variable memory cell, a first vertically oriented resistance variable material having an arcuate top surface in contact with a second electrode and a non-arcuate bottom surface in contact with the first electrode; and a second vertically oriented resistance variable material having an arcuate top surface in contact with a third electrode and a non-arcuate bottom surface in contact with the first electrode.
Claims10
A method of forming a memory cell, comprising:
- forming a memory cell material on a first electrode, wherein the memory cell material is formed on a wall of a via and on the first electrode;
- forming a first dielectric material on the memory cell material;
- removing a portion of the first dielectric material such that a portion of the memory cell material is exposed;
- forming a second electrode on a first exposed portion of the memory cell material and a third electrode on a second exposed portion of the memory cell material;
- and
- forming a spacer material on at least a portion of the second electrode and on at least a portion of the first dielectric material;
- and
- forming a first and a second memory cell structure by:
- removing at least a portion of the spacer material between the second and the third electrodes;
- removing at least a portion of the first dielectric material within the via;
- and
- removing at least a portion of the memory cell material formed on the first electrode.
A method of forming a memory cell, comprising:
- forming a memory cell structure having a via formed over a first electrode;
- forming a memory material on the first electrode and on the walls of the via such that a gap remains between the walls of the via;
- forming a first dielectric material on the memory material;
- removing a portion of the first dielectric material such that a portion of the memory material is exposed;
- forming a second electrode on a first exposed portion of the memory material and forming a third electrode on a second exposed portion of the memory material;
- forming a spacer material on at least a portion of the second electrode and on at least a portion of the first dielectric material;
- and
- removing at least a portion of the spacer material between the second and third electrodes, at least a portion of the first dielectric material within the via, and at least a portion of the memory material formed on the first electrode such that a first and a second phase change memory cell structure is formed.
A method of forming a memory cell, comprising:
- forming a memory cell material on a first electrode;
- forming a first dielectric material on the memory cell electrode;
- removing a portion of the first dielectric material such that a portion of the memory cell material is exposed;
- forming a second electrode on a first exposed portion of the memory cell material and a third electrode on a second exposed portion of the memory cell material;
- and
- forming a spacer material on at least a portion of the second electrode and on at least a portion of the first dielectric material;
- and
- forming the first electrode of a material that is different than at least one of the second electrode and the third electrode.
Dependencies are inferred from the claim text.