Resistive random access memory and method for producing same

Abstract

A resistive random access memory includes an oxygen-poor layer disposed on a first electrode layer and formed by indium tin oxide, indium oxide, tin dioxide, or zinc oxide. An insulating layer is disposed on the oxygen-poor layer and is formed by silicon dioxide or hafnium oxide. A second electrode layer is disposed on the insulating layer. A method for producing a resistive random access memory includes preparing a first electrode layer. An oxygen-poor layer is then formed on the first electrode layer. The oxygen-poor layer is formed by indium tin oxide, indium oxide, tin dioxide, or zinc oxide. Next, an insulating layer is formed on the oxygen-poor layer. The insulating layer formed by silicon dioxide or hafnium oxide. A second electrode layer is then formed on the insulating layer.

Dependencies are inferred from the claim text.