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US 9,287,500 B2Granted
Memory cells and methods of forming memory cells
AssigneeMicron Technology, Inc.
InventorsMartin Schubert, Scott E. Sills, Durai Vishak Nirmal Ramaswamy
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Abstract
Some embodiments include a memory cell having an electrode and a switching material over the electrode. The electrode is a first composition which includes a first metal and a second metal. The switching material is a second composition which includes the second metal. The second composition is directly against the first composition. Some embodiments include methods of forming memory cells.
Claims15
A memory cell, comprising:
- an electrode;
- a switching material proximate the electrode;
- an ion reservoir material proximate the switching material and on an opposing side of the switching material from the electrode;
- wherein the electrode comprises a first composition which includes a first metal and a second metal, and the switching material comprises a second composition which includes the second metal;
- the second composition being directly against the first composition;
- and
- wherein:
- the first composition is TiAlN, where the formula lists primary elements rather than designates a specific stoichiometry;
- and
- the second composition is AlO, where the formula lists primary elements rather than designates a specific stoichiometry.
7 more elements
A memory cell, comprising:
- an electrode;
- a switching material proximate the electrode;
- an ion reservoir material proximate the switching material and on an opposing side of the switching material from the electrode;
- wherein the electrode comprises a first composition which includes a first metal and a second metal, and the switching material comprises a second composition which includes the second metal;
- the second composition being directly against the first composition;
- and
- wherein:
- the first composition comprises M1M2N, where M1 and M2 are metals and the formula lists primary elements rather than designates a specific stoichiometry;
- and
- the second composition comprises M2O, where M2 is the metal and the formula lists primary elements rather than designates a specific stoichiometry.
7 more elements
A memory cell, comprising:
- a switching material against an electrode along an interface;
- an ion reservoir material on an opposing side of the switching material from the electrode, wherein the ion reservoir material comprises one or more of aluminum, copper and silver;
- wherein the switching material comprises an oxide at the interface;
- wherein the electrode comprises a nitride at the interface;
- and
- wherein the nitride includes at least two different metals, with at least one of said at least two different metals not being present in the oxide, and with at least one of said at least two different metals being present in the oxide.
3 more elements
A method of forming a memory cell, comprising:
- forming an opening to extend through a dielectric material to a conductive line;
- forming a first electrode within the opening and adjacent the conductive line;
- the first electrode comprising a first composition containing a first metal and a second metal;
- forming a switching material over the first electrode and along the first composition at an interface;
- the switching material comprising a second composition at the interface with the second composition containing the second metal;
- forming an ion reservoir material over the switching material;
- forming a second electrode over the ion reservoir material;
- and
- wherein:
- the first composition is M1M2N, where M1 and M2 are metals and the formula lists primary elements rather than designates a specific stoichiometry;
- and
- the second composition is M2O, where M2 is the metal and the formula lists primary elements rather than designates a specific stoichiometry.
9 more elements
Dependencies are inferred from the claim text.