Integrated circuit device
AssigneeKabushiki Kaisha Toshiba
InventorsHikari Tajima, Masaki Kondo, Tsukasa Nakai, Takashi Izumida, Nobuaki Yasutake
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Abstract
An integrated circuit device according to an embodiment includes an electrode extending in a first direction, two semiconductor members spaced from each other in the first direction and extending in a second direction crossing the first direction, an insulating film placed between each of the two semiconductor members and the electrode and made of a first insulating material, and a first dielectric member placed between the two semiconductor members and made of a second insulating material having a higher permittivity than the first insulating material.
Claims20
An integrated circuit (IC) device comprising:
- an electrode extending in a first direction;
- two semiconductor members spaced from each other in the first direction and extending in a second direction crossing the first direction;
- an insulating film placed between each of the two semiconductor members and the electrode and made of a first insulating material;
- and
- a first dielectric member placed between the two semiconductor members and made of a second insulating material having a higher permittivity than the first insulating material.
An integrated circuit (IC) device comprising:
- two first wirings extending in a first direction and spaced from each other in a second direction crossing the first direction;
- two semiconductor members spaced from each other in the second direction and extending in a third direction crossing the first direction and the second direction, end parts of the two semiconductor members on one side of the third direction respectively connected to the two first wirings;
- an electrode extending in the second direction;
- an insulating film placed between each of the two semiconductor members and the electrode and made of a first insulating material;
- and
- a first dielectric member placed between the two semiconductor members and made of a second insulating material having a higher permittivity than the first insulating material;
- two second wirings respectively connected to end parts of the two semiconductor members on the other side of the third direction and extending in the third direction;
- a third wiring;
- and
- two resistance change films respectively connected between the two second wirings and the third wiring,
- the two second wirings, the two resistance change films, and the third wiring forming two memory elements.
Dependencies are inferred from the claim text.