Dielectric thin film on electrodes for resistance change memory devices
AssigneeIntel Corporation
InventorDerChang Kau
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Abstract
Embodiments of the present disclosure describe techniques and configurations for increasing thermal insulation in a resistance change memory device, also known as a phase change memory (PCM) device. In one embodiment, an apparatus includes a storage structure of a PCM device, the storage structure having a chalcogenide material, an electrode having an electrically conductive material, the electrode having a first surface that is directly coupled with the storage structure, and a dielectric film having a dielectric material, the dielectric film being directly coupled with a second surface of the electrode that is disposed opposite to the first surface. Other embodiments may be described and/or claimed.
Claims11
An apparatus comprising:
- a storage structure of a phase change memory (PCM) device, the storage structure having a chalcogenide material and having a first surface and a second surface that is disposed opposite to the first surface;
- a first electrode having a first electrically conductive material, the first electrode having a first surface that is directly coupled with the first surface of the storage structure;
- a dielectric film consisting of a single layer of a dielectric material, wherein the dielectric film has a thickness of less than 0.7 nanometers, wherein the dielectric film is directly coupled with a second surface of the first electrode that is disposed opposite to the first surface of the first electrode, and wherein the dielectric film includes a ceramic selected from the group consisting of titanium oxide (TiO2) magnesium oxide (MgO), tungsten oxide (WO), and tantalum oxide (Ta2O5);
- and
- a second electrode having a second electrically conductive material, the second electrode being directly coupled with the second surface of the storage structure.
A system comprising:
- a processor;
- and
- a phase change memory (PCM) device coupled to the processor, the PCM device including:
- a storage structure of a phase change memory (PCM) device, the storage structure having a chalcogenide material and having a first surface and a second surface that is disposed opposite to the first surface;
- a first electrode having a first electrically conductive material, the first electrode having a first surface that is directly coupled with the first surface of the storage structure;
- a dielectric film consisting of a single layer of a dielectric material with a thickness of less than 0.7 nanometers, wherein the dielectric film is directly coupled with a second surface of the first electrode that is disposed opposite to the first surface of the first electrode, and wherein the dielectric film includes a ceramic selected from the group consisting of titanium oxide (TiO2), magnesium oxide (MgO), tungsten oxide (WO), and tantalum oxide (Ta2O5);
- and
- a second electrode having a second electrically conductive material, the second electrode being directly coupled with the second surface of the storage structure.
An apparatus comprising:
- a storage structure of a phase change memory (PCM) device, the storage structure having a chalcogenide material and having a first surface and a second surface that is disposed opposite to the first surface;
- a first electrode having a first electrically conductive material, the first electrode having a first surface that is directly coupled with the first surface the storage structure;
- a dielectric film consisting of a single layer of a dielectric material with a thickness of less than 0.7 nanometers, wherein the dielectric film is directly coupled with a second surface of the first electrode that is disposed opposite to the first surface of the first electrode, and wherein the dielectric film includes a ceramic selected from the group consisting of titanium oxide (TiO2), magnesium oxide (MgO), tungsten oxide (WO), and tantalum oxide (Ta2O5);
- and
- a second electrode having a second electrically conductive material, the second electrode being directly coupled with the second surface of the storage structure.
Dependencies are inferred from the claim text.