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US 9,287,497 B2Granted
Integrated circuits with hall effect sensors and methods for producing such integrated circuits
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsEng Huat Toh, Xinfu Liu
Life of this patent
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Abstract
Integrated circuits with a Hall effect sensor and methods for fabricating such integrated circuits are provided. The method includes forming a buried plate layer within a substrate and overlying a substrate base, where the buried plate layer is doped with an “N” type dopant. A cover insulating layer if formed overlying the buried plate layer, and a plurality of contact points are formed adjacent to the cover insulating layer.
Claims19
A method of producing an integrated circuit comprising:
- forming a buried plate layer within a substrate and overlying a substrate base, wherein the buried plate layer is doped with an “N” type dopant;
- forming a cover insulating layer overlying the buried plate layer;
- and
- forming a plurality of contact points in the substrate, wherein the plurality of contact points are adjacent to the cover insulating layer, and wherein the plurality of contacts are on four different sides of the cover insulating layer.
1 more element
A method of producing an integrated circuit comprising:
- forming a buried plate layer within a substrate and overlying a substrate base, wherein the buried plate layer comprises an “N” type dopant;
- forming a second cover layer overlying the buried plate layer, wherein the second cover layer comprises a “P” type dopant;
- forming a first cover layer overlying the second cover layer such that the second cover layer is positioned between the first cover layer and the buried plate layer, and wherein the first cover layer comprises “P” type dopant;
- and
- forming a plurality of contact points on four different sides of the first cover layer.
2 more elements
Dependencies are inferred from the claim text.