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US 9,287,496 B2Granted
Semiconductor fabricating device and method for driving the same, and method for fabricating magnetic tunnel junction using the same
AssigneeSK hynix Inc.
InventorWon Joon Choi
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Abstract
In a method for fabricating a magnetic tunnel junction, a first magnetic layer is formed on a substrate, and a tunnel insulating layer is formed on the first magnetic layer. Subsequently, a second magnetic layer is formed on the tunnel insulating layer. In the method, the first magnetic layer is formed by periodically sputtering a magnetic target while a metal target is continuously sputtered.
Claims10
A method for fabricating a magnetic tunnel junction, comprising:
- forming a first magnetic layer on a substrate;
- forming a tunnel insulating layer on the first magnetic layer;
- and
- forming a second magnetic layer on the tunnel insulating layer,
- wherein the first magnetic layer is formed by periodically sputtering a magnetic target on the substrate during a period while continuously sputtering a metal target on the substrate during the period.
2 more elements
Dependencies are inferred from the claim text.