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US 9,287,495 B2Granted
Method of manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorKazuhiro Tomioka
Life of this patent
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Abstract
According to one embodiment, a method of manufacturing a semiconductor device includes forming a silicon nitride layer on a metal layer, forming a plasma of a gas mixture of carbon oxide and oxygen, and selectively etching the silicon nitride layer with respect to the metal layer by using the plasma of the gas mixture.
Claims19
A method of manufacturing a semiconductor device, the method comprising:
- forming a silicon nitride layer on a metal layer;
- forming a plasma of a gas mixture of carbon oxide and oxygen;
- and
- selectively etching the silicon nitride layer with respect to the metal layer by using the plasma of the gas mixture,
- wherein the carbon oxide is one of CO2 and CO,
- a flow rate of CO2 is equal to or larger than 50 sccm and is equal to or smaller than 500 sccm, and
- a flow rate of the oxygen is equal to or larger than 1% of the flow rate of CO2 and is equal to or smaller than 10% of the flow rate of CO2.
4 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming a metal layer on a magnetoresistive element as a first metal layer
- patterning at least part of the magnetoresistive element in a thickness direction by using the first metal layer as a mask;
- forming a silicon nitride layer on the first metal layer;
- forming a plasma of a gas mixture of carbon oxide and oxygen;
- and
- selectively etching the silicon nitride layer with respect to the first metal layer by using the plasma of the gas mixture;
- wherein the silicon nitride layer is formed on a sidewall of the at least part of the magnetoresistive element in the thickness direction and on the first metal layer,
- wherein the magnetoresistive element comprises a first magnetic layer and a second magnetic layer formed on an insulating layer on the first magnetic layer,
- the second magnetic layer is patterned by using the first metal layer as a mask,
- the silicon nitride layer is formed on a sidewall of the second magnetic layer of the magnetoresistive element and on the first metal layer, and
- the silicon nitride layer is left on a sidewall of the second magnetic layer of the magnetoresistive element in a self-aligned manner by etching the silicon nitride layer, and
- wherein the first magnetic layer is patterned by using the first metal layer and the silicon nitride layer left in the self-aligned manner as a mask.
9 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming a silicon nitride layer on a metal layer;
- forming a plasma of a gas mixture of only carbon oxide and oxygen;
- and
- selectively etching the silicon nitride layer with respect to the metal layer by using the plasma of the gas mixture.
1 more element
Dependencies are inferred from the claim text.