Piezoelectronic transistor with co-planar common and gate electrodes
AssigneeInternational Business Machines Corporation
InventorsBrian A. Bryce, Josephine B. Chang, Marcelo A. Kuroda
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Abstract
A method of forming a piezoelectronic transistor (PET), the PET, and a semiconductor device including the PET are described. The method includes forming a piezoelectric (PE) element with a trench and forming a pair of electrodes on the PE element in a coplanar arrangement in a first plane, both of the pair of electrodes being on a same side of the PE element. The method also includes forming a piezoresistive (PR) element above the pair of electrodes and forming a clamp above the PR element. Applying a voltage to the pair of electrodes causes displacement of the PE element perpendicular to the first plane.
Claims8
A method of forming a piezoelectronic transistor (PET), the method comprising:
- forming a piezoelectric (PE) element with a trench therein;
- forming a pair of electrodes on the PE element in a coplanar arrangement in a first plane, both of the pair of electrodes being on a same side of the PE element;
- forming a piezoresistive (PR) element above the pair of electrodes;
- and
- forming a clamp above the PR element, wherein applying a voltage to the pair of electrodes causes displacement of the PE element in a second plane perpendicular to the first plane.
Dependencies are inferred from the claim text.