Vertical nitride semiconductor device and method for manufacturing same

A vertical nitride semiconductor device, comprising:

• a conductive substrate having a first surface, a second surface opposite to the first surface and side surfaces;
• a semiconductor layer bonded to a side of the first surface of the conductive substrate via a second electrode and made of nitride;
• a metal layer formed on the second surface of the conductive substrate;
• a first electrode formed on a front surface facing a bonding front surface of the semiconductor layer;
• and
• a bonding layer formed between the conductive substrate and the second electrode and made of an electrode material or a conductive material, wherein
• the conductive substrate has a flange part, which extends from the side surfaces of the conductive substrate, on a side of the second surface thereof, wherein
• each of at least two of the side surfaces of the conductive substrate on the side of the first surface is flush with a corresponding side surface of the semiconductor layer and a corresponding side surface of the bonding layer and
• each of at least two side surfaces of the flange part is flush with a corresponding side surface of the metal layer.