Light-emitting diode and method for manufacturing the same
AssigneeLextar Electronics Corporation
InventorsChia-Lin Hsiao, Nai-Wei Hsu, Te-Chung Wang, Tsung-Yu Yang
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Abstract
The disclosure provides a light-emitting diode and a method for manufacturing the same. The light-emitting diode comprises a N-type metal electrode, a N-type semiconductor layer contacted with the N-type metal electrode, a P-type semiconductor layer, a light-emitting layer interposed between the N-type semiconductor layer and the P-type semiconductor layer, a low-contact-resistance material layer positioned on the P-type semiconductor layer, a transparent conductive layer covered the low-contact-resistance material layer and the P-type semiconductor layer, and a P-type metal electrode positioned on the transparent conductive layer.
Claims9
A light-emitting diode comprising:
- an N-type metal electrode;
- an N-type semiconductor layer contacting the N-type metal electrode;
- a P-type semiconductor layer;
- a light-emitting layer sandwiched between the N-type semiconductor layer and the P-type semiconductor layer;
- a low-contact-resistance material layer positioned on a part of the P-type semiconductor layer;
- a transparent conductive layer covering the low-contact-resistance material layer and the P-type semiconductor layer;
- a P-type metal electrode positioned on the transparent conductive layer;
- and
- a metal-indium contact layer positioned between the P-type semiconductor layer and the transparent conductive layer, wherein the low-contact-resistance material layer is embedded in the metal-indium contact layer and protrudes above a surface of the metal-indium contact layer into the transparent conductive layer.
Dependencies are inferred from the claim text.