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US 9,287,459 B2Granted
Light-emitting device
AssigneeEpistar Corporation
InventorsTsen-Kuei Wang, Ming-Yung Jow, Bor-Cherng Chen, Tsung-Ta Yu
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Abstract
A light-emitting device comprises: a light-emitting semiconductor stack; and an electrode on the light-emitting semiconductor stack comprising a base material and a contact material different from the base material and capable of forming an ohmic contact with semiconductor material; wherein the contact material is distributed over a part of the light-emitting device and has a largest concentration in the electrode.
Claims20
A light-emitting device, comprising:
- a semiconductor system comprising a light-emitting semiconductor stack;
- and
- an electrode comprising a surface next to the semiconductor system and comprising a base material and a contact material different from the base material, wherein the contact material diffuses into the semiconductor system;
- wherein the contact material has a largest intensity at a depth position from a SIMS spectrum a distance between the depth position and the surface is not less than 500 nm, and the base material has a significant intensity at the depth position from the SIMS spectrum.
1 more element
A method for making a light emitting device, comprising steps of:
- providing a light-emitting semiconductor stack;
- forming a first layer on the light-emitting semiconductor stack, wherein the first layer comprises a first alloy sub-layer;
- and
- forming a second layer on the first layer, wherein the second layer comprises a second alloy sub-layer;
- wherein the first alloy sub-layer and the second alloy sub-layer both comprise a contact material capable of forming an ohmic contact with semiconductor material, and a thickness of the second layer is larger than a thickness of the first layer.
2 more elements
Dependencies are inferred from the claim text.