Light emitting device and light emitting device package

A light emitting device, comprising:

• a light emitting structure including a first doped semiconductor layer, an active layer on the first doped semiconductor layer, and a second doped semiconductor layer on the active layer;
• a transmissive electrode layer on the second doped semiconductor layer;
• an insulating layer on the first doped semiconductor layer;
• a first electrode on the first doped semiconductor layer;
• and
• a second electrode on the transmissive electrode layer and the second doped semiconductor layer, wherein the transmissive electrode layer is spaced apart from the insulating layer, wherein a portion of the transmissive electrode layer is disposed under the second electrode, and wherein a top surface of the insulating layer is flush with a first top surface of the transmissive electrode layer.

A light emitting device, comprising:

• a light emitting structure including a first doped semiconductor layer, an active layer on the first doped semiconductor layer, and a second doped semiconductor layer on the active layer;
• a transmissive electrode layer on the second doped semiconductor layer;
• an insulating layer on the first doped semiconductor layer;
• a first electrode on the first doped semiconductor layer;
• and
• a second electrode on the transmissive electrode layer and the second doped semiconductor layer, wherein the transmissive electrode layer is spaced apart from the insulating layer, and wherein the transmissive electrode layer comprises a multiple layer structure including an indium tin oxide (ITO) and a metal layer comprising at least one of Au, Ag or Ni.