Back to results
US 9,287,455 B2Granted
Deep ultraviolet light emitting diode
AssigneeSensor Electronic Technology, Inc.
InventorsMichael Shur, Remigijus Gaska, Jinwei Yang
Life of this patent
Estimating the term…
Abstract
A carbon doped short period superlattice is provided. A heterostructure includes a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers. One or more of the quantum wells and/or the barriers includes a carbon doped layer (e.g., a non-percolated or percolated carbon atomic plane).
Claims23
A group III nitride semiconductor heterostructure comprising:
- a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers, wherein the plurality quantum wells comprise a semiconductor material having a first band gap and the plurality of barriers comprise a semiconductor material having a second band gap wider than the first band gap, and wherein at least one of:
- the plurality of quantum wells or the plurality of barriers includes a carbon doped layer including a plurality of openings.
A group III nitride semiconductor light emitting device comprising:
- a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers, wherein the plurality quantum wells comprise a semiconductor material having a first band gap and the plurality of barriers comprise a semiconductor material having a second band gap wider than the first band gap, and wherein at least one of:
- the plurality of quantum wells or the plurality of barriers includes a carbon doped layer including a plurality of openings.
A method comprising:
- fabricating a group III nitride semiconductor heterostructure, the fabricating including forming a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers, wherein the plurality quantum wells comprise a semiconductor material having a first band gap and the plurality of barriers comprise a semiconductor material having a second band gap wider than the first band gap, and wherein at least one of:
- the plurality of quantum wells or the plurality of barriers includes a carbon doped layer including a plurality of openings.
Dependencies are inferred from the claim text.