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US 9,287,454 B2Granted
Nitride semiconductor light-emitting device with a layer containing In and Mg and method for producing the same
AssigneeCanon Kabushiki Kaisha
InventorTakeshi Kawashima
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Abstract
A method for producing a light-emitting device includes the steps of: forming a layer containing In on a substrate in a reactor in which a Mg-containing raw material has been used; and forming an active layer including a nitride semiconductor on the layer containing In.
Claims12
A light-emitting device comprising:
- a layer containing In and Mg;
- an active layer comprising a nitride semiconductor;
- and
- a p-type layer,
- wherein the layer containing In and Mg, the active layer and the p-type layer are arranged in order from a side of a substrate.
2 more elements
Dependencies are inferred from the claim text.