Solid state lighting devices with dielectric insulation and methods of manufacturing
AssigneeMicron Technology, Inc.
InventorScott D. Schellhammer
Life of this patent
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Abstract
Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The solid state lighting device also includes an indentation extending from the second semiconductor material toward the active region and the first semiconductor material and an insulating material in the indentation of the solid state lighting structure.
Claims14
A solid state lighting device, comprising:
- a first semiconductor material;
- a second semiconductor material spaced apart from the first semiconductor material;
- an active region between the first and second semiconductor materials, the active region including at least one of an indium gallium nitride single quantum well, gallium nitride (GaN)/indium gallium nitride (InGaN) multiple quantum wells, and an InGaN bulk material;
- V-defect that defines sidewalls of an indentation extending between at least one of the first semiconductor material and the second semiconductor material, the first semiconductor material and the active region, and the active region and the second semiconductor material, wherein the sidewalls are surrounded by at least one of the first semiconductor material, the second semiconductor material, and the active region;
- a conductive material inside the indentation and in contact with the second semiconductor material, wherein the conductive material is different than the first and second semiconductor materials;
- and
- an insulating material in the indentation and electrically insulating at least a portion of the first semiconductor material from the conductive material.
A solid state lighting device, comprising:
- a solid state lighting structure having:
- a first semiconductor material;
- a second semiconductor material spaced apart from the first semiconductor material;
- an active region between the first and second semiconductor materials;
- a V-defect that defines sidewalls of an indentation extending from the second semiconductor material toward the active region and the first semiconductor material, wherein the indentation is surrounded by the first semiconductor material, the second semiconductor material, and/or the active region;
- and
- an insulating material and a conductive material in the indentation of the solid state lighting structure, wherein the conductive material is different than the first and second semiconductor materials.
A solid state lighting device, comprising:
- a solid state lighting structure having:
- a first semiconductor material;
- a second semiconductor material spaced apart from the first semiconductor material;
- an active region between the first and second semiconductor materials;
- a V-defect that forms sidewalls of an indentation extending into the solid state light structure, wherein the sidewalls are surrounded by at least one of the first semiconductor material, the second semiconductor material, and the active region;
- and
- an insulating material and a conductive material in the indentation, the insulating material being in contact with and covering at least a portion of the active region of the solid state lighting structure wherein the conductive material is different than the first and second semiconductor materials.
Dependencies are inferred from the claim text.