Ultraviolet reflective rough adhesive contact
AssigneeSensor Electronic Technology, Inc.
InventorsRemigijus Gaska, Maxim S. Shatalov, Alexander Lunev, Alexander Dobrinsky, Jinwei Yang, Michael Shur
Life of this patent
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Abstract
A device including a first semiconductor layer and a contact to the first semiconductor layer is disclosed. An interface between the first semiconductor layer and the contact includes a first roughness profile having a characteristic height and a characteristic width. The characteristic height can correspond to an average vertical distance between crests and adjacent valleys in the first roughness profile. The characteristic width can correspond to an average lateral distance between the crests and adjacent valleys in the first roughness profile.
Claims23
A device comprising:
- a first semiconductor layer;
- a contact to the first semiconductor layer, wherein an interface between the first semiconductor layer and the contact includes a first roughness profile having a characteristic height of at least three nanometers and a characteristic width of at least 0.1 micron;
- and
- an interlayer located between the first semiconductor layer and the contact, wherein the interlayer comprises a plurality of islands each having a closed boundary that is separate from the first semiconductor layer and the contact, wherein some of the plurality of islands have a boundary that extends into both the first semiconductor layer and the contact.
A device comprising:
- a first semiconductor layer;
- a contact to the first semiconductor layer, wherein an interface between the first semiconductor layer and the contact includes a first roughness profile with a characteristic height and a characteristic width, wherein the characteristic height is an average vertical distance between adjacent crests and valleys of the first roughness profile, and is at least approximately three nanometers, and wherein the characteristic width is an average lateral distance between adjacent crests and valleys of the first roughness profile, and is within a range of approximately 0.1 micron to approximately fifty microns;
- and
- an interlayer located between the first semiconductor layer and the contact, wherein the interlayer comprises a plurality of islands each having a closed boundary that is separate from the first semiconductor layer and the contact, wherein some of the plurality of islands have a boundary that extends into both the first semiconductor layer and the contact.
A method comprising:
- fabricating a device, the device comprising:
- a first semiconductor layer;
- a contact to the first semiconductor layer, wherein an interface between the first semiconductor layer and the contact includes a first roughness profile having a characteristic height of at least three nanometers and a characteristic width of at least 0.1 micron;
- and
- an interlayer located between the first semiconductor layer and the contact, wherein the interlayer comprises a plurality of islands each having a closed boundary that is separate from the first semiconductor layer and the contact, wherein some of the plurality of islands have a boundary that extends into both the first semiconductor layer and the contact.
Dependencies are inferred from the claim text.