Semiconductor light emitting element
AssigneeKabushiki Kaisha Toshiba
InventorsHironori Yamasaki, Katsuyoshi Furuki, Yukie Nishikawa
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Abstract
According to one embodiment, a semiconductor light emitting element includes a light emitting layer, a current spreading layer of a first conductivity type, and a pad electrode. The light emitting layer is capable of emitting light. The current spreading layer has a first surface and a second surface. The light emitting layer is disposed on a side of the first surface. A light extraction surface having convex structures of triangle cross-sectional shape and a flat surface which is a crystal growth plane are included in the second surface. The pad electrode is provided on the flat surface. One base angle of the convex structure is 90 degrees or more.
Claims10
A semiconductor light emitting element, comprising:
- a light emitting layer capable of emitting light;
- and
- a current spreading layer of a first conductivity type having a first surface and a second surface, wherein,
- the light emitting layer is provided on the first surface,
- the second surface including a light extraction region and a flat contact region,
- the light extraction region having a plurality of convex structures with triangle cross-sectional shape,
- a bottom portion of each of the plurality of convex structures with triangle cross-sectional shape is parallel to a crystal growth plane, wherein the plurality of convex structures with triangle cross-sectional shape is below the flat contact region at the second surface of the current spreading layer,
- one of base angles of each of the plurality of convex structures with triangle cross-sectional shape is more than 90 degrees,
- the other of the base angles of each of the plurality of convex structures with triangle cross-sectional shape is between 35 degrees and 45 degrees, and
- the current spreading layer includes one of Inx(AlyGa1-y)1-xP (0≦x≦1 and 0≦y≦1), AlxGa1-xAs (0≦x≦1), Inx(AlyGa1-y)1-xAszP1-z (0≦x≦1, 0≦y≦1 and 0≦z≦1), and InxAlyGa1-x-yN (0≦x≦1, 0≦y≦1, and x+y≦1).
A semiconductor light emitting element, comprising:
- a light emitting layer capable of emitting light;
- and
- a current spreading layer of a first conductivity type having a first surface and a second surface, wherein,
- the light emitting layer is provided on the first surface,
- the second surface including a light extraction region and a flat contact region,
- the light extraction region having a plurality of convex structures with triangle cross-sectional shape,
- a bottom portion of each of the plurality of convex structures with triangle cross-sectional shape is parallel to a crystal growth plane, wherein the plurality of convex structures with triangle cross-sectional shape is below the flat contact region at the second surface of the current spreading layer,
- a crystal orientation of the crystal growth plane is tilted from a {100} plane with an angle between 10 degrees and 20 degrees,
- one of base angles of each of the plurality of convex structures with triangle cross-sectional shape is more than 90 degrees,
- the other of the base angles of each of the plurality of convex structures with triangle cross-sectional shape is between 35 degrees and 45 degrees, and
- the current spreading layer includes one of Inx(AlyGa1-y)1-xP (0≦x≦1 and 0≦y≦1), AlxGa1-xAs (0≦x≦1), Inx(AlyGa1-y)1-xAszP1-z (0≦x≦1, 0≦y≦1 and 0≦z≦1), and InxAlyGa1-x-yN (0≦x≦1, 0≦y≦1, and x+y≦1).
Dependencies are inferred from the claim text.