Nanostructure semiconductor light emitting device

A nanostructure semiconductor light emitting device, comprising:

• a base layer formed of a first conductivity-type semiconductor material;
• an insulating layer disposed on the base layer and having a plurality of openings;
• a plurality of light emitting nanostructures each disposed in an opening of the plurality of openings, each light emitting nanostructure including a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on surfaces of the nanocore;
• and
• a contact electrode spaced apart from the insulating layer by a distance greater than approximately 50% of a height of the light emitting nanostructures measured from a surface of the insulating layer and disposed on a portion of the second conductivity-type semiconductor layer,
• wherein a tip portion of each respective light emitting nanostructure has crystal planes different from those on side surfaces of the respective light emitting nanostructure.