Nanostructured device
AssigneeGlo AB
InventorsSteven Louis Konsek, Yourii Martynov, Jonas Ohlsson, Peter Jesper Hanberg
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Abstract
A nanostructured device according to the invention comprises a first group of nanowires protruding from a substrate where each nanowire of the first group of nanowires comprises at least one pn- or p-i-n-junction. A first contact, at least partially encloses and is electrically connected to a first side of the pn- or p-i-n-junction of each nanowire in the first group of nanowires. A second contacting means comprises a second group of nanowires that protrudes from the substrate, and is arranged to provide an electrical connection to a second side of the pn- or p-i-n-junction.
Claims7
A method of forming a nanostructured device, comprising the steps of:
- providing a substrate
- growing a first group of nanowires and a second group of nanowires on the substrate or a buffer layer on the substrate,
- forming a pn- or p-i-n-junction in each of the nanowires of the first and second groups of nanowires,
- forming a first contact that at least partially encloses and electrically connects to a first side of the pn or p-i-n junction of each nanowire in only the first group of nanowires, and
- forming a second contact that at least partly encloses only the nanowires of the second group of nanowires, whereby the second contact forms part of an electrical connection to a second side of the pn- or p-i-n-junction of each nanowire in the first group of nanowires,
- wherein the second group of nanowires are electrically inactive.
Dependencies are inferred from the claim text.